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EnglishA 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/AlGaN/Si structures at different ambient temperatures. Deep-level traps originated by Carbon doping, impact-ionization generation and thermally activated Poole-Frenkel conduction have been modeled to assess the role of such physical mechanisms on the forward-bias leakage current. A good agreement with experimental data has been obtained by implementing conduction and valence mini-bands within the deeper transition layer created by conductive dislocation defects or by superlattice structures. A 2D isolation device has been investigated up to breakdown and, for the first time to our knowledge, we prove with 2D TCAD simulation that in GaN based devices both impact-ionization and Poole-Frenkel conduction effects must be taken into account to correctly match experimental data.
| Titolo: | Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures | |
| Autore/i: | CORNIGLI, DAVIDE; REGGIANI, SUSANNA; GNANI, ELENA; GNUDI, ANTONIO; BACCARANI, GIORGIO; Moens, Peter; Vanmeerbeek, Piet; Banerjee, Abhishek; MENEGHESSO, GAUDENZIO | |
| Autore/i Unibo: | ||
| Anno: | 2015 | |
| Titolo del libro: | 2015 IEEE International Electron Devices Meeting (IEDM) | |
| Pagina iniziale: | 5.3.1 | |
| Pagina finale: | 5.3.4 | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/IEDM.2015.7409633 | |
| Abstract: | A 2D TCAD-based approach is proposed to investigate the leakage current and breakdown regime of GaN/AlGaN/Si structures at different ambient temperatures. Deep-level traps originated by Carbon doping, impact-ionization generation and thermally activated Poole-Frenkel conduction have been modeled to assess the role of such physical mechanisms on the forward-bias leakage current. A good agreement with experimental data has been obtained by implementing conduction and valence mini-bands within the deeper transition layer created by conductive dislocation defects or by superlattice structures. A 2D isolation device has been investigated up to breakdown and, for the first time to our knowledge, we prove with 2D TCAD simulation that in GaN based devices both impact-ionization and Poole-Frenkel conduction effects must be taken into account to correctly match experimental data. | |
| Data stato definitivo: | 18-mag-2017 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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http://hdl.handle.net/11585/588892
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