IMPERIALE, ILARIA
 Distribuzione geografica
Continente #
NA - Nord America 1.015
EU - Europa 369
AS - Asia 155
AF - Africa 20
SA - Sud America 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.564
Nazione #
US - Stati Uniti d'America 1.013
GB - Regno Unito 120
CN - Cina 61
DE - Germania 59
IT - Italia 51
SG - Singapore 42
UA - Ucraina 37
SE - Svezia 26
IE - Irlanda 21
VN - Vietnam 19
IN - India 17
RU - Federazione Russa 13
FR - Francia 11
ZA - Sudafrica 11
JO - Giordania 10
EE - Estonia 8
BE - Belgio 7
GR - Grecia 6
TG - Togo 5
CH - Svizzera 4
JP - Giappone 3
SC - Seychelles 3
CL - Cile 2
FI - Finlandia 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BG - Bulgaria 1
BR - Brasile 1
CA - Canada 1
CI - Costa d'Avorio 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EC - Ecuador 1
ID - Indonesia 1
MX - Messico 1
NL - Olanda 1
TH - Thailandia 1
TR - Turchia 1
Totale 1.564
Città #
Ann Arbor 373
Fairfield 100
Southend 98
Ashburn 65
Chandler 57
Woodbridge 56
Santa Clara 39
Seattle 39
Wilmington 39
Cambridge 37
Houston 35
Singapore 35
Jacksonville 27
Dublin 21
Princeton 21
Dong Ket 19
Boardman 15
Nanjing 14
Amman 10
Padova 10
Turin 10
Westminster 10
Bologna 9
Jinan 8
Medford 8
Brussels 7
Saint Petersburg 7
Berlin 6
Mülheim 6
Shenyang 6
Cesena 5
Hebei 5
Lomé 5
London 4
Frankfurt am Main 3
Mahé 3
Nanchang 3
San Diego 3
Tokyo 3
Bern 2
Dresden 2
Guangzhou 2
Helsinki 2
Los Angeles 2
Middleton 2
Milan 2
Modena 2
Provo 2
San Venanzo 2
Taiyuan 2
Tianjin 2
Verona 2
Abidjan 1
Bagnacavallo 1
Bandung 1
Bangkok 1
Beijing 1
Bremen 1
Buffalo 1
Cadelbosco Di Sopra 1
Changsha 1
Dallas 1
Des Moines 1
Edinburgh 1
Falls Church 1
Fremont 1
Hangzhou 1
Hyderabad 1
Jiaxing 1
Jinzhong 1
Kiev 1
Kunming 1
Lanzhou 1
Madison 1
Mexico City 1
Montreal 1
Moscow 1
Ningbo 1
Quito 1
Redmond 1
San Francisco 1
Shanghai 1
Silverton 1
Sofia 1
São Paulo 1
Tallinn 1
Tappahannock 1
Wageningen 1
Washington 1
Totale 1.284
Nome #
Computational study of graphene nanoribbon FETs for RF applications 220
TCAD modeling of charge transport in HV-IC encapsulation materials 195
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 167
High-frequency analog GNR-FET design criteria 161
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 149
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects 148
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 144
Optimization of HV LDMOS devices accounting for packaging interaction 143
Role of encapsulation formulation on charge transport phenomena and HV device instability 134
Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering 123
Totale 1.584
Categoria #
all - tutte 3.313
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 3.313


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020270 0 0 0 0 42 34 50 47 45 29 10 13
2020/2021191 33 13 11 29 3 8 3 21 13 10 17 30
2021/2022525 12 6 68 61 70 44 58 57 51 18 27 53
2022/2023250 28 32 6 29 24 11 8 12 55 2 27 16
2023/202437 1 13 3 2 2 3 3 3 0 5 1 1
2024/2025116 13 29 11 14 49 0 0 0 0 0 0 0
Totale 1.584