statistiche ricercatore

Continente	#
NA - Nord America	1.205
AS - Asia	495
EU - Europa	411
AF - Africa	35
SA - Sud America	23
Continente sconosciuto - Info sul continente non disponibili	21
Totale	2.190

Nazione	#
US - Stati Uniti d'America	1.193
SG - Singapore	163
CN - Cina	144
GB - Regno Unito	122
VN - Vietnam	84
DE - Germania	67
IT - Italia	55
UA - Ucraina	38
HK - Hong Kong	30
SE - Svezia	26
FR - Francia	25
IN - India	22
IE - Irlanda	21
RU - Federazione Russa	21
JP - Giappone	18
ZA - Sudafrica	14
BR - Brasile	12
JO - Giordania	10
CI - Costa d'Avorio	9
BE - Belgio	8
EE - Estonia	8
KR - Corea	8
GR - Grecia	6
TG - Togo	5
CA - Canada	4
CH - Svizzera	4
ID - Indonesia	4
MX - Messico	4
AR - Argentina	3
CL - Cile	3
FI - Finlandia	3
SC - Seychelles	3
TH - Thailandia	3
TR - Turchia	3
BD - Bangladesh	2
EC - Ecuador	2
ES - Italia	2
PH - Filippine	2
UZ - Uzbekistan	2
VE - Venezuela	2
A2 - ???statistics.table.value.countryCode.A2???	1
BG - Bulgaria	1
CO - Colombia	1
CR - Costa Rica	1
CZ - Repubblica Ceca	1
DK - Danimarca	1
DZ - Algeria	1
EG - Egitto	1
GD - Grenada	1
JM - Giamaica	1
MA - Marocco	1
NI - Nicaragua	1
NL - Olanda	1
PL - Polonia	1
TN - Tunisia	1
Totale	2.170

Nome	#
TCAD modeling of charge transport in HV-IC encapsulation materials	280
Computational study of graphene nanoribbon FETs for RF applications	276
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime	252
High-frequency analog GNR-FET design criteria	214
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs	207
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions	205
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects	204
Optimization of HV LDMOS devices accounting for packaging interaction	191
Role of encapsulation formulation on charge transport phenomena and HV device instability	181
Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering	180
Totale	2.190

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	439	0	0	0	61	70	44	58	57	51	18	27	53
2022/2023	250	28	32	6	29	24	11	8	12	55	2	27	16
2023/2024	37	1	13	3	2	2	3	3	3	0	5	1	1
2024/2025	193	13	29	11	14	49	6	11	10	0	9	11	30
2025/2026	459	40	54	44	32	74	25	48	6	88	30	15	3
2026/2027	70	6	16	36	12	0	0	0	0	0	0	0	0
Totale													2.190

CRIS Current Research Information System