IMPERIALE, ILARIA
 Distribuzione geografica
Continente #
NA - Nord America 955
EU - Europa 369
AS - Asia 101
AF - Africa 20
SA - Sud America 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.450
Nazione #
US - Stati Uniti d'America 953
GB - Regno Unito 120
DE - Germania 59
IT - Italia 51
CN - Cina 47
UA - Ucraina 37
SE - Svezia 26
IE - Irlanda 21
VN - Vietnam 19
IN - India 17
RU - Federazione Russa 13
FR - Francia 11
ZA - Sudafrica 11
JO - Giordania 10
EE - Estonia 8
BE - Belgio 7
GR - Grecia 6
TG - Togo 5
CH - Svizzera 4
JP - Giappone 3
SC - Seychelles 3
CL - Cile 2
FI - Finlandia 2
SG - Singapore 2
A2 - ???statistics.table.value.countryCode.A2??? 1
BG - Bulgaria 1
BR - Brasile 1
CA - Canada 1
CI - Costa d'Avorio 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
EC - Ecuador 1
ID - Indonesia 1
MX - Messico 1
NL - Olanda 1
TH - Thailandia 1
TR - Turchia 1
Totale 1.450
Città #
Ann Arbor 373
Fairfield 100
Southend 98
Ashburn 64
Chandler 57
Woodbridge 56
Seattle 39
Wilmington 39
Cambridge 37
Houston 35
Jacksonville 27
Dublin 21
Princeton 21
Dong Ket 19
Nanjing 14
Amman 10
Padova 10
Turin 10
Westminster 10
Bologna 9
Jinan 8
Medford 8
Brussels 7
Saint Petersburg 7
Berlin 6
Mülheim 6
Shenyang 6
Boardman 5
Cesena 5
Hebei 5
Lomé 5
London 4
Frankfurt am Main 3
Mahé 3
Nanchang 3
San Diego 3
Tokyo 3
Bern 2
Dresden 2
Helsinki 2
Middleton 2
Milan 2
Modena 2
Provo 2
San Venanzo 2
Taiyuan 2
Verona 2
Abidjan 1
Bagnacavallo 1
Bandung 1
Bangkok 1
Bremen 1
Buffalo 1
Cadelbosco Di Sopra 1
Changsha 1
Dallas 1
Des Moines 1
Edinburgh 1
Falls Church 1
Fremont 1
Hangzhou 1
Hyderabad 1
Jiaxing 1
Kiev 1
Kunming 1
Lanzhou 1
Los Angeles 1
Madison 1
Mexico City 1
Montreal 1
Moscow 1
Ningbo 1
Quito 1
Redmond 1
San Francisco 1
Silverton 1
Sofia 1
São Paulo 1
Tallinn 1
Tappahannock 1
Tianjin 1
Wageningen 1
Washington 1
Totale 1.192
Nome #
Computational study of graphene nanoribbon FETs for RF applications 210
TCAD modeling of charge transport in HV-IC encapsulation materials 183
TCAD modeling of encapsulation layer in high-voltage, high-temperature operation regime 160
High-frequency analog GNR-FET design criteria 153
Full-Quantum Calculations of Low-Field Channel Mobility in Graphene Nanoribbon FETs Including Acoustic Phonon Scattering and Edge Roughness Effects 137
Role of the insulating fillers in the encapsulation material on the lateral charge spreading in HV-ICs 133
Optimization of HV LDMOS devices accounting for packaging interaction 130
Numerical study of GaN-on-Si HEMT breakdown instability accounting for substrate and packaging interactions 129
Role of encapsulation formulation on charge transport phenomena and HV device instability 124
Mode space approach for tight-binding transport simulations in graphene nanoribbon field-effect transistors including phonon scattering 111
Totale 1.470
Categoria #
all - tutte 2.989
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.989


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020343 37 9 6 21 42 34 50 47 45 29 10 13
2020/2021191 33 13 11 29 3 8 3 21 13 10 17 30
2021/2022525 12 6 68 61 70 44 58 57 51 18 27 53
2022/2023250 28 32 6 29 24 11 8 12 55 2 27 16
2023/202437 1 13 3 2 2 3 3 3 0 5 1 1
2024/20252 2 0 0 0 0 0 0 0 0 0 0 0
Totale 1.470