GIULIANO, FEDERICO
 Distribuzione geografica
Continente #
NA - Nord America 277
EU - Europa 158
AS - Asia 87
AF - Africa 15
Totale 537
Nazione #
US - Stati Uniti d'America 276
IT - Italia 100
SG - Singapore 32
CN - Cina 22
DE - Germania 22
GB - Regno Unito 11
IN - India 11
CI - Costa d'Avorio 10
SE - Svezia 10
PK - Pakistan 8
FR - Francia 6
KR - Corea 5
IE - Irlanda 4
TG - Togo 4
TW - Taiwan 4
HK - Hong Kong 3
PL - Polonia 3
ID - Indonesia 2
AT - Austria 1
CA - Canada 1
FI - Finlandia 1
NG - Nigeria 1
Totale 537
Città #
Ann Arbor 85
Singapore 31
Bologna 25
Redmond 24
Chandler 23
Santa Clara 23
Ashburn 18
Milan 11
Abidjan 10
Florence 10
Princeton 8
Southend 8
Houston 7
Vallefoglia 7
Wilmington 7
Boardman 6
Bucheon-si 5
Rahim Yar Khan 5
Cesena 4
Dublin 4
Fairfield 4
Genova 4
Lomé 4
Woodbridge 4
Boydton 3
Cambridge 3
Shatin 3
Warsaw 3
Washington 3
Beijing 2
Bromma 2
Busalla 2
Changsha 2
Dallas 2
Ferrara di Monte Baldo 2
Los Angeles 2
Marseille 2
Medford 2
Munich 2
New York 2
Nürnberg 2
Ravenna 2
Rawalpindi 2
Rimini 2
Roorkee 2
San Diego 2
Taipei 2
Turin 2
Vignola 2
Wallingford 2
Zhengzhou 2
Aprilia 1
Bagnacavallo 1
Berlin 1
Bühl 1
Castel Maggiore 1
Cervia 1
Cesenatico 1
Chiavari 1
Des Moines 1
Faisalabad 1
Forlì 1
Fort Worth 1
Fremont 1
Gaomi 1
Helsinki 1
Jakarta 1
Jiaxing 1
Lagos 1
Leawood 1
Levanto 1
London 1
Mannheim 1
Monmouth Junction 1
Montpellier 1
Nuremberg 1
Ozzano dell'Emilia 1
Perugia 1
Pesaro 1
Salsomaggiore Terme 1
San Giuliano Terme 1
San Pier d'Arena 1
Seattle 1
Springfield 1
Stuttgart 1
Taiyuan 1
Taizhou 1
Teramo 1
Toronto 1
Westminster 1
Totale 435
Nome #
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 161
TCAD predictions of hot-electron injection in p-type LDMOS transistors 136
Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators 94
Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors 82
Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors 55
Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation 26
Totale 554
Categoria #
all - tutte 1.717
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.717


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202018 0 0 0 0 0 0 0 10 0 5 1 2
2020/202150 2 3 0 1 0 12 8 3 5 5 2 9
2021/2022169 3 4 14 12 16 11 12 33 30 6 15 13
2022/2023159 8 4 13 25 7 29 8 15 26 11 8 5
2023/202460 0 11 10 4 4 9 4 4 4 3 6 1
2024/202598 12 11 10 29 36 0 0 0 0 0 0 0
Totale 554