GIULIANO, FEDERICO
 Distribuzione geografica
Continente #
NA - Nord America 254
EU - Europa 158
AS - Asia 48
AF - Africa 19
Totale 479
Nazione #
US - Stati Uniti d'America 253
IT - Italia 98
DE - Germania 22
CI - Costa d'Avorio 13
GB - Regno Unito 11
IN - India 11
CN - Cina 10
SE - Svezia 10
SG - Singapore 9
PK - Pakistan 8
FR - Francia 6
TG - Togo 5
IE - Irlanda 4
PL - Polonia 4
TW - Taiwan 4
HK - Hong Kong 3
AT - Austria 2
KR - Corea 2
CA - Canada 1
FI - Finlandia 1
ID - Indonesia 1
NG - Nigeria 1
Totale 479
Città #
Ann Arbor 85
Chandler 25
Redmond 24
Ashburn 21
Bologna 18
Abidjan 13
Florence 11
Singapore 9
Milan 8
Princeton 8
Southend 8
Houston 7
Vallefoglia 7
Wilmington 7
Lomé 5
Rahim Yar Khan 5
Cesena 4
Dublin 4
Fairfield 4
Genova 4
Warsaw 4
Washington 4
Woodbridge 4
Boydton 3
Cambridge 3
Shatin 3
Beijing 2
Bromma 2
Busalla 2
Changsha 2
Dallas 2
Ferrara di Monte Baldo 2
Los Angeles 2
Marseille 2
Medford 2
Munich 2
New York 2
Nürnberg 2
Ravenna 2
Rawalpindi 2
Rimini 2
Roorkee 2
San Diego 2
Taipei 2
Turin 2
Vignola 2
Wallingford 2
Zhengzhou 2
Aprilia 1
Bagnacavallo 1
Berlin 1
Bühl 1
Castel Maggiore 1
Cervia 1
Cesenatico 1
Chiavari 1
Des Moines 1
Faisalabad 1
Forlì 1
Fremont 1
Helsinki 1
Lagos 1
Leawood 1
Levanto 1
London 1
Mannheim 1
Monmouth Junction 1
Montpellier 1
Nuremberg 1
Ozzano dell'Emilia 1
Perugia 1
Pesaro 1
Salsomaggiore Terme 1
San Giuliano Terme 1
San Pier d'Arena 1
Seattle 1
Stuttgart 1
Taiyuan 1
Taizhou 1
Teramo 1
Toronto 1
Vienna 1
Westminster 1
Totale 377
Nome #
TCAD simulation of hot-carrier stress degradation in split-gate n-channel STI-LDMOS transistors 147
TCAD predictions of hot-electron injection in p-type LDMOS transistors 124
Novel TCAD Approach for the Investigation of Charge Transport in Thick Amorphous SiO2 Insulators 81
Constant-current time dependent dielectric breakdown in thick amorphous SiO2 capacitors 65
Characterization and numerical analysis of breakdown in thick amorphous SiO2 capacitors 40
Thickness-dependent dielectric breakdown in thick amorphous SiO2 capacitors 28
Breakdown-Voltage Degradation Under AC Stress of Thick SiO2 Capacitors for Galvanic Insulation 11
Totale 496
Categoria #
all - tutte 1.548
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.548


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202018 0 0 0 0 0 0 0 10 0 5 1 2
2020/202150 2 3 0 1 0 12 8 3 5 5 2 9
2021/2022169 3 4 14 12 16 11 12 33 30 6 15 13
2022/2023168 8 4 13 26 9 29 9 16 30 11 8 5
2023/202477 0 17 11 5 4 12 7 4 4 3 6 4
2024/202514 14 0 0 0 0 0 0 0 0 0 0 0
Totale 496