In this work we present an investigation on a novel device concept meant to achieve a steep subthreshold slope by filtering out high-energy electrons entering the device channel. The filtering function is entrusted to a superlattice in the source extension region, which could possibly be fabricated by deposition of a number of appropriate semiconductor layers within a manufacturing process of vertical nanowires. Simulation results indicate that an SS = 26 mV/dec can be achieved using GaAs/AlGaAs as the constituent materials of the superlattice.

E. Gnani, S. Reggiani, A. Gnudi, G. Baccarani (2010). Steep-Slope Nanowire FET with a Superlattice in the Source Extension. SEVILLE : IEEE [10.1109/ESSDERC.2010.5618207].

Steep-Slope Nanowire FET with a Superlattice in the Source Extension

GNANI, ELENA;REGGIANI, SUSANNA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2010

Abstract

In this work we present an investigation on a novel device concept meant to achieve a steep subthreshold slope by filtering out high-energy electrons entering the device channel. The filtering function is entrusted to a superlattice in the source extension region, which could possibly be fabricated by deposition of a number of appropriate semiconductor layers within a manufacturing process of vertical nanowires. Simulation results indicate that an SS = 26 mV/dec can be achieved using GaAs/AlGaAs as the constituent materials of the superlattice.
2010
Proceedings of the European Solid-State Device Research Conference (ESSDERC-2010), Seville, Spain, 14-16 September, 2010.
380
383
E. Gnani, S. Reggiani, A. Gnudi, G. Baccarani (2010). Steep-Slope Nanowire FET with a Superlattice in the Source Extension. SEVILLE : IEEE [10.1109/ESSDERC.2010.5618207].
E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/93255
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