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EnglishIn this work we propose a novel device concept with nearly ideal switching properties: i) a sustained inverse switching-slope as small as 3 mV/dec at room temperature; ii) no appreciable degradation of the on-current and, iii) a large output conductance at low drain voltage, which represents an essential property for rail-to-rail switching in logic applications. These extraordinary properties could posibly be achieved by shaping the density of states in the conduction band so as to generate a first subband with a small energy extension, and a second subband widely displaced in energy, so that its contribution to the drain current is negligible. Computer simulations accounting for the idealized band structure depicted thus far confirm the steep-slope turn-on characteristics of this ideal device, and give an insight on the optimal band-structure parameters.
| Titolo: | Steep-Slope Nanowire Field-Effect Transistor (SS-NWFET) | |
| Autore/i: | GNANI, ELENA; GNUDI, ANTONIO; REGGIANI, SUSANNA; BACCARANI, GIORGIO | |
| Autore/i Unibo: | ||
| Anno: | 2010 | |
| Titolo del libro: | Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010) | |
| Pagina iniziale: | 69 | |
| Pagina finale: | 72 | |
| Digital Object Identifier (DOI): | http://dx.doi.org/10.1109/SISPAD.2010.5604567 | |
| Abstract: | In this work we propose a novel device concept with nearly ideal switching properties: i) a sustained inverse switching-slope as small as 3 mV/dec at room temperature; ii) no appreciable degradation of the on-current and, iii) a large output conductance at low drain voltage, which represents an essential property for rail-to-rail switching in logic applications. These extraordinary properties could posibly be achieved by shaping the density of states in the conduction band so as to generate a first subband with a small energy extension, and a second subband widely displaced in energy, so that its contribution to the drain current is negligible. Computer simulations accounting for the idealized band structure depicted thus far confirm the steep-slope turn-on characteristics of this ideal device, and give an insight on the optimal band-structure parameters. | |
| Data prodotto definitivo in UGOV: | 1-dic-2010 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
File in questo prodotto:
http://hdl.handle.net/11585/93248
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