In this work we propose a novel device concept with nearly ideal switching properties: i) a sustained inverse switching-slope as small as 3 mV/dec at room temperature; ii) no appreciable degradation of the on-current and, iii) a large output conductance at low drain voltage, which represents an essential property for rail-to-rail switching in logic applications. These extraordinary properties could posibly be achieved by shaping the density of states in the conduction band so as to generate a first subband with a small energy extension, and a second subband widely displaced in energy, so that its contribution to the drain current is negligible. Computer simulations accounting for the idealized band structure depicted thus far confirm the steep-slope turn-on characteristics of this ideal device, and give an insight on the optimal band-structure parameters.

Steep-Slope Nanowire Field-Effect Transistor (SS-NWFET)

GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2010

Abstract

In this work we propose a novel device concept with nearly ideal switching properties: i) a sustained inverse switching-slope as small as 3 mV/dec at room temperature; ii) no appreciable degradation of the on-current and, iii) a large output conductance at low drain voltage, which represents an essential property for rail-to-rail switching in logic applications. These extraordinary properties could posibly be achieved by shaping the density of states in the conduction band so as to generate a first subband with a small energy extension, and a second subband widely displaced in energy, so that its contribution to the drain current is negligible. Computer simulations accounting for the idealized band structure depicted thus far confirm the steep-slope turn-on characteristics of this ideal device, and give an insight on the optimal band-structure parameters.
Proceedings of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2010)
69
72
E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/93248
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