Aim of this work is to illustrate a setup for the extraction of the impact-ionization multiplication factor in silicon as a function of the electric field on an extended range of temperatures, up to 800 K. First, the design of the optimal test structures for the measurements has been tackled, using Infineon's SPT5™ technology. Validating by numerical simulation the local relation between impact ionization and electric field, two different devices have been analysed and tested.
Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures / Gnani E.; Reggiani S.; Rudan M.; Baccarani G.. - STAMPA. - (2002), pp. 227-230. (Intervento presentato al convegno 32nd European Solid-State Device Research Conference, ESSDERC 2002 tenutosi a ita nel 2002) [10.1109/ESSDERC.2002.194911].
Extraction method for the impact-ionization multiplication factor in silicon at large operating temperatures
Gnani E.;Reggiani S.;Rudan M.;Baccarani G.
2002
Abstract
Aim of this work is to illustrate a setup for the extraction of the impact-ionization multiplication factor in silicon as a function of the electric field on an extended range of temperatures, up to 800 K. First, the design of the optimal test structures for the measurements has been tackled, using Infineon's SPT5™ technology. Validating by numerical simulation the local relation between impact ionization and electric field, two different devices have been analysed and tested.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
