A number of devices, that are under investigation for implementing and calibrating physical models at high operating temperatures and transient high current stress, exhibit geometrical features that do not allow for the application of the elementary Hall theory. Here, a more general calculation is carried out, that leads to the determination of the Hall voltage as a function of the position along the longitudinal direction in devices like, e.g., linear resistors or MOSFET's.
Rudan M., Reggiani S., Gnani E., Baccarani G. (2003). Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position. 345 E 47TH ST, NEW YORK, NY 10017 USA : IEEE Computer Society [10.1109/ESSDERC.2003.1256887].
Determination of the Hall voltage in devices with arbitrary aspect ratio and probe position
Rudan M.;Reggiani S.;Gnani E.;Baccarani G.
2003
Abstract
A number of devices, that are under investigation for implementing and calibrating physical models at high operating temperatures and transient high current stress, exhibit geometrical features that do not allow for the application of the elementary Hall theory. Here, a more general calculation is carried out, that leads to the determination of the Hall voltage as a function of the position along the longitudinal direction in devices like, e.g., linear resistors or MOSFET's.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
