In this paper, an experimental investigation on high-temperature carrier mobility in bulk silicon is carried out with the aim of improving our qualitative and quantitative understanding of carrier transport under ESD events. Circular van der Pauw patterns, suitable for resistivity and Hall measurements, were designed and manufactured using both the n and players made available by the BCD-3 smart-power technology. The previous measurements were carried out using a special measurement setup that allows operating temperatures in excess of 400 °C to be reached within the polar expansions of a commercial magnet. A novel extraction methodology that allows for the determination of the Hall factor and drift mobility against impurity concentration and lattice temperature has been developed. Also, a compact mobility model suitable for implementation in device simulators is worked out and implemented in the DESSIS© code. Comparisons with the mobility models by Masetti and Klaassen are shown in the temperature range between 25 and 400 °C.
Reggiani S., Valdinoci M., Colalongo L., Rudan M., Baccarani G., Stricker A.D., et al. (2002). Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility. IEEE TRANSACTIONS ON ELECTRON DEVICES, 49(3), 490-499 [10.1109/16.987121].
Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility
Reggiani S.
;Valdinoci M.;Colalongo L.;Rudan M.;Baccarani G.;
2002
Abstract
In this paper, an experimental investigation on high-temperature carrier mobility in bulk silicon is carried out with the aim of improving our qualitative and quantitative understanding of carrier transport under ESD events. Circular van der Pauw patterns, suitable for resistivity and Hall measurements, were designed and manufactured using both the n and players made available by the BCD-3 smart-power technology. The previous measurements were carried out using a special measurement setup that allows operating temperatures in excess of 400 °C to be reached within the polar expansions of a commercial magnet. A novel extraction methodology that allows for the determination of the Hall factor and drift mobility against impurity concentration and lattice temperature has been developed. Also, a compact mobility model suitable for implementation in device simulators is worked out and implemented in the DESSIS© code. Comparisons with the mobility models by Masetti and Klaassen are shown in the temperature range between 25 and 400 °C.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
