VALDINOCI, MARINA
VALDINOCI, MARINA
DIP. DI ELETTRONICA,INFORMATICA,SISTEMISTICA-DEIS
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Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility
2002 Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.D.; Illien F.; Felber N.; Fichtner W.; Zullino L.
Analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices
2000 Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G.
A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's
1999 Reggiani S.; Valdinoci M.; Colalongo L.; Baccarani G.
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Electron and hole mobility in silicon at large operating temperatures - Part I: Bulk mobility | Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G.; Stricker A.D.; Illien F.; Felber... N.; Fichtner W.; Zullino L. | 2002-01-01 | IEEE TRANSACTIONS ON ELECTRON DEVICES | - | 1.01 Articolo in rivista | - |
| Analytical, temperature-dependent model for majority- and minority-carrier mobility in silicon devices | Reggiani S.; Valdinoci M.; Colalongo L.; Rudan M.; Baccarani G. | 2000-01-01 | VLSI DESIGN | - | 1.01 Articolo in rivista | - |
| A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's | Reggiani S.; Valdinoci M.; Colalongo L.; Baccarani G. | 1999-01-01 | - | IEEE Computer Society | 4.01 Contributo in Atti di convegno | - |