A new analytical model for carrier mobility in silicon is presented, which is strongly oriented to numerical simulation and suitable for implementation in device simulators. The transverse-field dependence has been worked out in order to predict the measured effective mobility against effective field over a wide range of substrate doping concentrations. Simulations of a realistic long-channel MOS device have given good agreement with measured I-V characteristics.
A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's / Reggiani S.; Valdinoci M.; Colalongo L.; Baccarani G.. - STAMPA. - 13-15:(1999), pp. 1505484.240-1505484.243. (Intervento presentato al convegno 29th European Solid-State Device Research Conference, ESSDERC 1999 tenutosi a bel nel 1999).
A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's
Reggiani S.;Valdinoci M.;Colalongo L.;Baccarani G.
1999
Abstract
A new analytical model for carrier mobility in silicon is presented, which is strongly oriented to numerical simulation and suitable for implementation in device simulators. The transverse-field dependence has been worked out in order to predict the measured effective mobility against effective field over a wide range of substrate doping concentrations. Simulations of a realistic long-channel MOS device have given good agreement with measured I-V characteristics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
