A new analytical model for carrier mobility in silicon is presented, which is strongly oriented to numerical simulation and suitable for implementation in device simulators. The transverse-field dependence has been worked out in order to predict the measured effective mobility against effective field over a wide range of substrate doping concentrations. Simulations of a realistic long-channel MOS device have given good agreement with measured I-V characteristics.
Reggiani S., Valdinoci M., Colalongo L., Baccarani G. (1999). A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's. IEEE Computer Society.
A unified analytical model for bulk and surface mobility in Si n- and p-Channel MOSFET's
Reggiani S.;Valdinoci M.;Colalongo L.;Baccarani G.
1999
Abstract
A new analytical model for carrier mobility in silicon is presented, which is strongly oriented to numerical simulation and suitable for implementation in device simulators. The transverse-field dependence has been worked out in order to predict the measured effective mobility against effective field over a wide range of substrate doping concentrations. Simulations of a realistic long-channel MOS device have given good agreement with measured I-V characteristics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
