In this work we present an investigation on the program, erase and retention properties of TaN/Al2O3/HfO2/SiO2/Si (TAHOS) nonvolatile (NV) memory cells fabricated on an advanced gate-all-around (GAA) architecture. The influence of several device parameters on the above characteristics is quantitatively assessed by numerical simulation, using an in-house developed simulation code suitable for both planar and cylindrical geometries.
E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani, J. Fu, N. Singh, et al. (2009). Performance Analysis of Nonvolatile Gate-All-Around Charge-Trapping TAHOS Memory Cells. COLLEGE PARK : Ken Jones, Zeynep Dilli [10.1109/ISDRS.2009.5378209].
Performance Analysis of Nonvolatile Gate-All-Around Charge-Trapping TAHOS Memory Cells
GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;
2009
Abstract
In this work we present an investigation on the program, erase and retention properties of TaN/Al2O3/HfO2/SiO2/Si (TAHOS) nonvolatile (NV) memory cells fabricated on an advanced gate-all-around (GAA) architecture. The influence of several device parameters on the above characteristics is quantitatively assessed by numerical simulation, using an in-house developed simulation code suitable for both planar and cylindrical geometries.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
