A new approach for including quasi-ballistic effects into TCAD drift diffusion simulations of short-channel III-V MOSFETs at low longitudinal fields is presented. The model is based on the concept of ballistic mobility through a modified Matthiessen rule. It has been applied to double-gate thin-body InGaAs MOSFETs and benchmarked against multi-subband Monte Carlo simulations. Our results indicate that the model provides I-V characteristics in good agreement with Monte Carlo for channel lengths as short as 15 nm.
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections / Carapezzi, Stefania; Caruso, Enrico; Gnudi, Antonio; Reggiani, Susanna; Gnani, Elena. - STAMPA. - 2016-:(2016), pp. 7599674.416-7599674.419. (Intervento presentato al convegno 46th European Solid-State Device Research Conference, ESSDERC 2016 tenutosi a Lausanne, SWITZERLAND nel SEP 12-15, 2016) [10.1109/ESSDERC.2016.7599674].
TCAD low-field mobility model for InGaAs UTB MOSFETs including quasi-ballistic corrections
CARAPEZZI, STEFANIA;GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA
2016
Abstract
A new approach for including quasi-ballistic effects into TCAD drift diffusion simulations of short-channel III-V MOSFETs at low longitudinal fields is presented. The model is based on the concept of ballistic mobility through a modified Matthiessen rule. It has been applied to double-gate thin-body InGaAs MOSFETs and benchmarked against multi-subband Monte Carlo simulations. Our results indicate that the model provides I-V characteristics in good agreement with Monte Carlo for channel lengths as short as 15 nm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
