A 2-D semianalytical solution for the electrostatic potential valid for junctionless symmetric double-gate field-effect transistors in subthreshold regime is proposed, which is based on the parabolic approximation for the potential and removes previous limitations. Based on such a solution, a semi-analytical expression for the current is derived. The potential and current models are validated through comparisons with TCAD simulations and are used to evaluate relevant short-channel effect parameters, such as threshold roll-off, drain-induced barrier lowering, and inverse subthreshold slope. The implications of different possible definitions of threshold voltage, either based on the potential in the channel or on a fixed current level, are discussed. Finally, a fully analytical simplification for the current is suggested, which can be used in compact models for circuit simulations.

Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Baccarani (2013). Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 1342-1348 [10.1109/TED.2013.2247765].

Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors

GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2013

Abstract

A 2-D semianalytical solution for the electrostatic potential valid for junctionless symmetric double-gate field-effect transistors in subthreshold regime is proposed, which is based on the parabolic approximation for the potential and removes previous limitations. Based on such a solution, a semi-analytical expression for the current is derived. The potential and current models are validated through comparisons with TCAD simulations and are used to evaluate relevant short-channel effect parameters, such as threshold roll-off, drain-induced barrier lowering, and inverse subthreshold slope. The implications of different possible definitions of threshold voltage, either based on the potential in the channel or on a fixed current level, are discussed. Finally, a fully analytical simplification for the current is suggested, which can be used in compact models for circuit simulations.
2013
Antonio Gnudi, Susanna Reggiani, Elena Gnani, Giorgio Baccarani (2013). Semianalytical Model of the Subthreshold Current in Short-Channel Junctionless Symmetric Double-Gate Field-Effect Transistors. IEEE TRANSACTIONS ON ELECTRON DEVICES, 60, 1342-1348 [10.1109/TED.2013.2247765].
Antonio Gnudi;Susanna Reggiani;Elena Gnani;Giorgio Baccarani
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/238897
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