In this work we propose a physics-based analytical model of nanowire tunnel FETs, which is meant to provide a fast tool for an optimized device design. The starting point of the model is the Landauer expression of the current for 1D physical systems, augmented with suitable expressions of the tunneling probability across the tunnel junctions and the whole channel. So doing, we account for the ambipolar effect, as well as for the tunnel-related leakage current, which becomes appreciable when small band-gap materials are used. The model is validated by comparison with numerical simulation results provided by the k•p technique.
Physics -Based Analytical Model of Nanowire Tunnel-FETs / Gnani, Elena; Gnudi, Antonio; Reggiani, Susanna; Baccarani, Giorgio. - ELETTRONICO. - (2012), pp. 1-4. (Intervento presentato al convegno International Conference on Solid-State and Integrated Circuit Technology (ICSICT) tenutosi a Xi'An nel Oct. 29-Nov. 1 2012) [10.1109/ICSICT.2012.6467929].
Physics -Based Analytical Model of Nanowire Tunnel-FETs
GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2012
Abstract
In this work we propose a physics-based analytical model of nanowire tunnel FETs, which is meant to provide a fast tool for an optimized device design. The starting point of the model is the Landauer expression of the current for 1D physical systems, augmented with suitable expressions of the tunneling probability across the tunnel junctions and the whole channel. So doing, we account for the ambipolar effect, as well as for the tunnel-related leakage current, which becomes appreciable when small band-gap materials are used. The model is validated by comparison with numerical simulation results provided by the k•p technique.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
