An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters. The results confirm previous indications that the threshold voltage fluctuations are a serious concern for nanometer-scale JL FETs.
Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs / A. Gnudi; S. Reggiani; E. Gnani; G. Baccarani. - STAMPA. - (2012), pp. 117-120. (Intervento presentato al convegno The International Conference on Simulation of Semiconductor Processes and Devices tenutosi a Denver, Colorado nel 5-7 settembre 2012).
Analytical Model for the Threshold Voltage Variability due to Random Dopant Fluctuations in Junctionless FETs
GNUDI, ANTONIO;REGGIANI, SUSANNA;GNANI, ELENA;BACCARANI, GIORGIO
2012
Abstract
An analytical model of the threshold voltage variance induced by random dopant fluctuations (RDF) in junctionless (JL) FETs is derived for both cylindrical nanowire (NW) and planar double-gate (DG) structures considering only the device electrostatics in subthreshold. The model results are shown to be in reasonable agreement with TCAD simulations for different gate lengths and device parameters. The results confirm previous indications that the threshold voltage fluctuations are a serious concern for nanometer-scale JL FETs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
