In this work we report the main results of a research activity on a novel device concept which aims to achieve a steep switching behavior based on the filtering of high-energy electrons in the FET source region. The filtering function is entrusted to a superlattice in the source extension, which could possibly be fabricated by depositing a number of appropriate semiconductor layers within the manufacturing process of vertical nanowires. Simulation results indicate that a sustained inverse switching slope SS = 26 mV/dec can be achieved using GaAs/AlGaAs as the constituent materials of the superlattice. Further improvements are expected by a careful choice of the semiconductor pairs.
Superlattice-based steep-slope switch / E. Gnani; S. Reggiani; A. Gnudi; G. Baccarani. - STAMPA. - (2010), pp. 1227-1230. (Intervento presentato al convegno 10th IEEE International Conference on Solid-State and Integrated Circuit Technology tenutosi a Shanghai, China nel 1-4 november) [10.1109/ICSICT.2010.5667613].
Superlattice-based steep-slope switch
GNANI, ELENA;REGGIANI, SUSANNA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2010
Abstract
In this work we report the main results of a research activity on a novel device concept which aims to achieve a steep switching behavior based on the filtering of high-energy electrons in the FET source region. The filtering function is entrusted to a superlattice in the source extension, which could possibly be fabricated by depositing a number of appropriate semiconductor layers within the manufacturing process of vertical nanowires. Simulation results indicate that a sustained inverse switching slope SS = 26 mV/dec can be achieved using GaAs/AlGaAs as the constituent materials of the superlattice. Further improvements are expected by a careful choice of the semiconductor pairs.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
