In this work we investigate by numerical simulation the electrical properties of the junctionless nanowire field-effect transistor, which has recently been proposed as a possible alternative to the junction-based FET. The numerical model assumes a cylindrical geometry and is meant to provide a physical understanding of the device behaviour by highlighting the features of the I-V and C-V characteristics, as well as the electrostatic potential and carrier concentration within the channel. Numerical results are compared with the experimental turn-on characteristics and are found to provide a generally-good agreement. Finally, we discuss the strengths and the limitations of this device as a possible candidate for future technology nodes.
Numerical investigation on the junctionless nanowire FET / E. Gnani; A. Gnudi; S. Reggiani; G. Baccarani; N. Shen; N. Singh; G.Q. Lo; D.L. Kwong. - In: SOLID-STATE ELECTRONICS. - ISSN 0038-1101. - STAMPA. - 71:(2012), pp. 13-18. [10.1016/j.sse.2011.10.013]
Numerical investigation on the junctionless nanowire FET
GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;
2012
Abstract
In this work we investigate by numerical simulation the electrical properties of the junctionless nanowire field-effect transistor, which has recently been proposed as a possible alternative to the junction-based FET. The numerical model assumes a cylindrical geometry and is meant to provide a physical understanding of the device behaviour by highlighting the features of the I-V and C-V characteristics, as well as the electrostatic potential and carrier concentration within the channel. Numerical results are compared with the experimental turn-on characteristics and are found to provide a generally-good agreement. Finally, we discuss the strengths and the limitations of this device as a possible candidate for future technology nodes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
