In this work we investigate by numerical simulation the electrical properties of the junctionless nanowire field-effect transistor, which has recently been proposed as a possible alternative to the junction-based FET. The numerical model assumes a cylindrical geometry and is meant to provide a physical understanding of the device behavior by highlighting the features of the I-V and C-V characteristics, as well as the electric potential and carrier concentration within the channel. Numerical results are compared with the experimental turn-on characteristics and are found to provide a generally-good agreement. Finally, we discuss the strengths and the limitations of this device as a possible candidate for future technology nodes.
E. Gnani, A. Gnudi, S. Reggiani, G. Baccarani, N. Shen, N. Singh, et al. (2011). Numerical Investigation on the Junctionless Nanowire FET. Piscataway : IEEE Publishing Services [10.1109/ULIS.2011.5757981].
Numerical Investigation on the Junctionless Nanowire FET
GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO;
2011
Abstract
In this work we investigate by numerical simulation the electrical properties of the junctionless nanowire field-effect transistor, which has recently been proposed as a possible alternative to the junction-based FET. The numerical model assumes a cylindrical geometry and is meant to provide a physical understanding of the device behavior by highlighting the features of the I-V and C-V characteristics, as well as the electric potential and carrier concentration within the channel. Numerical results are compared with the experimental turn-on characteristics and are found to provide a generally-good agreement. Finally, we discuss the strengths and the limitations of this device as a possible candidate for future technology nodes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
