ESSENI, DAVID
 Distribuzione geografica
Continente #
NA - Nord America 656
EU - Europa 241
AS - Asia 75
AF - Africa 24
OC - Oceania 1
SA - Sud America 1
Totale 998
Nazione #
US - Stati Uniti d'America 655
GB - Regno Unito 69
DE - Germania 36
IT - Italia 36
SE - Svezia 33
CN - Cina 27
VN - Vietnam 25
IE - Irlanda 14
UA - Ucraina 12
CI - Costa d'Avorio 9
IN - India 9
RU - Federazione Russa 9
BG - Bulgaria 7
JO - Giordania 7
FR - Francia 6
EE - Estonia 5
ZA - Sudafrica 5
NG - Nigeria 4
TG - Togo 4
BE - Belgio 3
TR - Turchia 3
CH - Svizzera 2
GR - Grecia 2
SG - Singapore 2
AU - Australia 1
CA - Canada 1
CL - Cile 1
EG - Egitto 1
ES - Italia 1
FI - Finlandia 1
IR - Iran 1
JP - Giappone 1
NL - Olanda 1
PL - Polonia 1
PT - Portogallo 1
RO - Romania 1
SC - Seychelles 1
SI - Slovenia 1
Totale 998
Città #
Ann Arbor 215
Chandler 86
Southend 60
Fairfield 53
Ashburn 37
Seattle 34
Wilmington 34
Woodbridge 32
Cambridge 27
Houston 16
Princeton 15
Dublin 14
Bologna 13
Redmond 11
Abidjan 9
Amman 7
Nanjing 7
Sofia 7
Jacksonville 6
Turin 6
Westminster 6
Aachen 5
Bremen 5
Padova 5
San Diego 5
Abeokuta 4
Berlin 4
Changsha 4
Lomé 4
Medford 4
Saint Petersburg 4
Boardman 3
Brussels 3
Hebei 3
Shenyang 3
Bern 2
London 2
Beijing 1
Bondeno 1
Boston 1
Cairo 1
Clearwater 1
Den Haag 1
Eden Prairie 1
Falls Church 1
Frankfurt am Main 1
Fremont 1
Fuzhou 1
Haikou 1
Hangzhou 1
Helsinki 1
Istanbul 1
Jinan 1
Lisbon 1
Mahé 1
Melbourne 1
Milan 1
Mülheim 1
Ningbo 1
Norwalk 1
Olalla 1
Quzhou 1
Radeberg 1
Ravenna 1
Reston 1
Rome 1
San Francisco 1
Singapore 1
Sioux Falls 1
Taiyuan 1
Tokyo 1
Toronto 1
Verona 1
Warsaw 1
Zhengzhou 1
Totale 793
Nome #
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 196
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs 177
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 165
Modeling approaches for band-structure calculation in III-V FET quantum wells 157
Performance study of strained III-V materials for ultra-thin body transistor applications 137
Influence of interface traps on the performance of Tunnel FETs 133
Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach 50
Totale 1.015
Categoria #
all - tutte 2.032
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.032


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020213 28 3 2 15 26 24 30 29 28 16 6 6
2020/2021116 18 10 0 7 6 5 0 9 10 6 9 36
2021/2022354 7 4 42 33 40 36 39 37 35 14 16 51
2022/2023227 32 33 10 44 15 13 4 7 41 7 12 9
2023/202428 2 10 1 3 1 8 0 0 0 2 0 1
2024/20254 4 0 0 0 0 0 0 0 0 0 0 0
Totale 1.015