ESSENI, DAVID
 Distribuzione geografica
Continente #
NA - Nord America 695
EU - Europa 242
AS - Asia 132
AF - Africa 24
OC - Oceania 1
SA - Sud America 1
Totale 1.095
Nazione #
US - Stati Uniti d'America 694
GB - Regno Unito 69
CN - Cina 47
IT - Italia 37
SG - Singapore 37
DE - Germania 36
SE - Svezia 33
VN - Vietnam 25
IE - Irlanda 14
UA - Ucraina 12
CI - Costa d'Avorio 9
IN - India 9
RU - Federazione Russa 9
BG - Bulgaria 7
JO - Giordania 7
FR - Francia 6
EE - Estonia 5
ZA - Sudafrica 5
NG - Nigeria 4
TG - Togo 4
BE - Belgio 3
TR - Turchia 3
CH - Svizzera 2
GR - Grecia 2
ID - Indonesia 2
AU - Australia 1
CA - Canada 1
CL - Cile 1
EG - Egitto 1
ES - Italia 1
FI - Finlandia 1
IR - Iran 1
JP - Giappone 1
NL - Olanda 1
PL - Polonia 1
PT - Portogallo 1
RO - Romania 1
SC - Seychelles 1
SI - Slovenia 1
Totale 1.095
Città #
Ann Arbor 215
Chandler 86
Southend 60
Fairfield 53
Ashburn 37
Seattle 35
Singapore 34
Wilmington 34
Woodbridge 32
Cambridge 27
Santa Clara 23
Houston 16
Princeton 15
Bologna 14
Dublin 14
Redmond 11
Boardman 10
Abidjan 9
Amman 7
Nanjing 7
Sofia 7
Jacksonville 6
Turin 6
Westminster 6
Aachen 5
Bremen 5
Padova 5
San Diego 5
Abeokuta 4
Berlin 4
Changsha 4
Lomé 4
Medford 4
Saint Petersburg 4
Brussels 3
Hebei 3
Shenyang 3
Beijing 2
Bern 2
Fuzhou 2
Hangzhou 2
Jakarta 2
London 2
Wuhan 2
Zhengzhou 2
Baoding 1
Bondeno 1
Boston 1
Cairo 1
Chengdu 1
Clearwater 1
Den Haag 1
Eden Prairie 1
Falls Church 1
Frankfurt am Main 1
Fremont 1
Guangzhou 1
Haikou 1
Helsinki 1
Istanbul 1
Jinan 1
Lisbon 1
Mahé 1
Melbourne 1
Milan 1
Mülheim 1
Ningbo 1
Norwalk 1
Olalla 1
Phoenix 1
Quzhou 1
Radeberg 1
Ravenna 1
Reston 1
Rome 1
San Francisco 1
Shanghai 1
Shantou 1
Sioux Falls 1
Taiyuan 1
Tokyo 1
Toronto 1
Verona 1
Warsaw 1
Xi'an 1
Totale 873
Nome #
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells 213
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs 186
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD 178
Modeling approaches for band-structure calculation in III-V FET quantum wells 168
Performance study of strained III-V materials for ultra-thin body transistor applications 156
Influence of interface traps on the performance of Tunnel FETs 148
Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach 63
Totale 1.112
Categoria #
all - tutte 2.361
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.361


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020115 0 0 0 0 0 0 30 29 28 16 6 6
2020/2021116 18 10 0 7 6 5 0 9 10 6 9 36
2021/2022354 7 4 42 33 40 36 39 37 35 14 16 51
2022/2023227 32 33 10 44 15 13 4 7 41 7 12 9
2023/202428 2 10 1 3 1 8 0 0 0 2 0 1
2024/2025101 13 16 10 18 39 5 0 0 0 0 0 0
Totale 1.112