ESSENI, DAVID
ESSENI, DAVID
DIP. DI ELETTRONICA,INFORMATICA,SISTEMISTICA-DEIS
Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach
2021 Caruso E.; Esseni D.; Gnani E.; Lizzit D.; Palestri P.; Pin A.; Puglisi F.M.; Selmi L.; Zagni N.
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD
2017 Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri, P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G.
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells
2016 Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele
Performance study of strained III-V materials for ultra-thin body transistor applications
2016 Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khomyakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt
Influence of interface traps on the performance of Tunnel FETs
2015 Esseni, D.; Pala, M.; Gnani, E.; Sangiorgi, E.
Modeling approaches for band-structure calculation in III-V FET quantum wells
2015 Caruso, Enrico; Zerveas, G.; Baccarani, Giorgio; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, M.; Markussen, T.; Palestri, P.; Schenk, A.; Selmi, L.; Sousa, M.; Stokbro, K.; Visciarelli, Michele
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs
2004 Alessandrini, M.; Esseni, David; Fiegna, Claudio
| Titolo | Autore(i) | Anno | Periodico | Editore | Tipo | File |
|---|---|---|---|---|---|---|
| Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach | Caruso E.; Esseni D.; Gnani E.; Lizzit D.; Palestri P.; Pin A.; Puglisi F.M.; Selmi L.; Zagni N. | 2021-01-01 | ELECTRONICS | - | 1.01 Articolo in rivista | electronics-10-02472-v2.pdf |
| Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD | Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri,... P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G. | 2017-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells | Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, Dav...id; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele | 2016-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | Edit Comprehensive comparison.pdf |
| Performance study of strained III-V materials for ultra-thin body transistor applications | Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khom...yakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt | 2016-01-01 | - | Editions Frontieres | 4.01 Contributo in Atti di convegno | - |
| Influence of interface traps on the performance of Tunnel FETs | Esseni, D.; Pala, M.; Gnani, E.; Sangiorgi, E. | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Modeling approaches for band-structure calculation in III-V FET quantum wells | Caruso, Enrico; Zerveas, G.; Baccarani, Giorgio; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, E...lena; Gnudi, Antonio; Grassi, Roberto; Luisier, M.; Markussen, T.; Palestri, P.; Schenk, A.; Selmi, L.; Sousa, M.; Stokbro, K.; Visciarelli, Michele | 2015-01-01 | - | Institute of Electrical and Electronics Engineers Inc. | 4.01 Contributo in Atti di convegno | - |
| Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs | Alessandrini, M.; Esseni, David; Fiegna, Claudio | 2004-01-01 | SOLID-STATE ELECTRONICS | - | 1.01 Articolo in rivista | - |