ESSENI, DAVID

ESSENI, DAVID  

DIP. DI ELETTRONICA,INFORMATICA,SISTEMISTICA-DEIS  

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Risultati 1 - 7 di 7 (tempo di esecuzione: 0.018 secondi).
Titolo Autore(i) Anno Periodico Editore Tipo File
Modeling nanoscale iii–v channel mosfets with the self-consistent multi-valley/multi-subband monte carlo approach Caruso E.; Esseni D.; Gnani E.; Lizzit D.; Palestri P.; Pin A.; Puglisi F.M.; Selmi L.; Zagni N. 2021-01-01 ELECTRONICS - 1.01 Articolo in rivista electronics-10-02472-v2.pdf
Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD Selmi, L.; Caruso, E.; Carapezzi, S.; Visciarelli, M.; Gnani, E.; Zagni, N.; Pavan, P.; Palestri,... P.; Esseni, D.; Gnudi, A.; Reggiani, S.; Puglisi, F.M.; Verzellesi, G. 2017-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Comprehensive comparison and experimental validation of band-structure calculation methods in III-V semiconductor quantum wells Zerveas, George; Caruso, Enrico; Baccarani, Giorgio; Czornomaz, Lukas; Daix, Nicolas; Esseni, Dav...id; Gnani, Elena; Gnudi, Antonio; Grassi, Roberto; Luisier, Mathieu; Markussen, Troels; Osgnach, Patrik; Palestri, Pierpaolo; Schenk, Andreas; Selmi, Luca; Sousa, Marilyne; Stokbro, Kurt; Visciarelli, Michele 2016-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista Edit Comprehensive comparison.pdf
Performance study of strained III-V materials for ultra-thin body transistor applications Rau, Martin; Markussen, Troels; Caruso, Enrico; Esseni, David; Gnani, Elena; Gnudi, Antonio; Khom...yakov, Petr A.; Luisier, Mathieu; Osgnach, Patrik; Palestri, Pierpaolo; Reggiani, Susanna; Schenk, Andreas; Selmi, Luca; Stokbro, Kurt 2016-01-01 - Editions Frontieres 4.01 Contributo in Atti di convegno -
Influence of interface traps on the performance of Tunnel FETs Esseni, D.; Pala, M.; Gnani, E.; Sangiorgi, E. 2015-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Modeling approaches for band-structure calculation in III-V FET quantum wells Caruso, Enrico; Zerveas, G.; Baccarani, Giorgio; Czornomaz, L.; Daix, N.; Esseni, David; Gnani, E...lena; Gnudi, Antonio; Grassi, Roberto; Luisier, M.; Markussen, T.; Palestri, P.; Schenk, A.; Selmi, L.; Sousa, M.; Stokbro, K.; Visciarelli, Michele 2015-01-01 - Institute of Electrical and Electronics Engineers Inc. 4.01 Contributo in Atti di convegno -
Development of an analytical mobility model for the simulation of ultra-thin single- and double-gate SOI MOSFETs ALESSANDRINI M.; ESSENI D.; FIEGNA C. 2004-01-01 SOLID-STATE ELECTRONICS - 1.01 Articolo in rivista -