The solution method for the Boltzmann Transport Equation (BTE) based on the spherical-harmonics expansion (SHE) has been applied to the transport problem in a Si-SiO2 structure. A new model has been introduced to calculate the microscopic fluxes at the interface between the two materials, based on the thermionic theory. Results of a 2D MOSFET simulation are shown to validate the model.
Electron injection in MOSFETs with a self-consistent Si and SiO2 BTE solution based on spherical-harmonics expansion / Marsella M.; Reggiani S.; Gnudi A.; Rudan M.. - STAMPA. - (2000), pp. 1503780.604-1503780.607. (Intervento presentato al convegno 30th European Solid-State Device Research Conference, ESSDERC 2000 tenutosi a irl nel 2000) [10.1109/ESSDERC.2000.194850].
Electron injection in MOSFETs with a self-consistent Si and SiO2 BTE solution based on spherical-harmonics expansion
Reggiani S.;Gnudi A.;Rudan M.
2000
Abstract
The solution method for the Boltzmann Transport Equation (BTE) based on the spherical-harmonics expansion (SHE) has been applied to the transport problem in a Si-SiO2 structure. A new model has been introduced to calculate the microscopic fluxes at the interface between the two materials, based on the thermionic theory. Results of a 2D MOSFET simulation are shown to validate the model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
