The solution method for the Boltzmann Transport Equation (BTE) based on the spherical-harmonics expansion (SHE) has been applied to the transport problem in a Si-SiO2 structure. A new model has been introduced to calculate the microscopic fluxes at the interface between the two materials, based on the thermionic theory. Results of a 2D MOSFET simulation are shown to validate the model.
Marsella M., Reggiani S., Gnudi A., Rudan M. (2000). Electron injection in MOSFETs with a self-consistent Si and SiO2 BTE solution based on spherical-harmonics expansion. IEEE Computer Society [10.1109/ESSDERC.2000.194850].
Electron injection in MOSFETs with a self-consistent Si and SiO2 BTE solution based on spherical-harmonics expansion
Reggiani S.;Gnudi A.;Rudan M.
2000
Abstract
The solution method for the Boltzmann Transport Equation (BTE) based on the spherical-harmonics expansion (SHE) has been applied to the transport problem in a Si-SiO2 structure. A new model has been introduced to calculate the microscopic fluxes at the interface between the two materials, based on the thermionic theory. Results of a 2D MOSFET simulation are shown to validate the model.File in questo prodotto:
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