Density of states and group velocity for the valence bands of SiO2 are worked out as a function of energy. The purpose is to provide reliable parameters for the calculation of hole transport within gate oxides, which is acquiring more relevance in view of the application to advanced MOS devices. It is shown that the applicability of the effective-mass concept to hole transport in SiO2 is much more restricted than in other materials. © 2003 The American Physical Society.
Gnani E., Reggiani S., Rudan M. (2003). Hole density of states and group velocity in SiO2. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 68(23), 233203-1-233203-4 [10.1103/PhysRevB.68.233203].
Hole density of states and group velocity in SiO2
Gnani E.;Reggiani S.;Rudan M.
2003
Abstract
Density of states and group velocity for the valence bands of SiO2 are worked out as a function of energy. The purpose is to provide reliable parameters for the calculation of hole transport within gate oxides, which is acquiring more relevance in view of the application to advanced MOS devices. It is shown that the applicability of the effective-mass concept to hole transport in SiO2 is much more restricted than in other materials. © 2003 The American Physical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
