In this work we focus on the effects of switched gate and substrate bias on the Random Telegraph Signal (RTS) noise in small-area MOSFETs. The results of experimental characterization of low-frequency noise in 0.12 micron MOSFETs show that by applying a reverse substrate bias during the OFF-phase within a switched-gate bias scheme, a significant reduction of RTS noise is obtained.
N. Zanolla, D. Siprak, M. Tiebout, P. Baumgartner, E. Sangiorgi, C. Fiegna (2009). Suppression of Random Telegraph Signal Noise in small-area MOSFETs under switched gate and substrate bias conditions. s.l : American Institute of Physics.
Suppression of Random Telegraph Signal Noise in small-area MOSFETs under switched gate and substrate bias conditions
ZANOLLA, NICOLA;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2009
Abstract
In this work we focus on the effects of switched gate and substrate bias on the Random Telegraph Signal (RTS) noise in small-area MOSFETs. The results of experimental characterization of low-frequency noise in 0.12 micron MOSFETs show that by applying a reverse substrate bias during the OFF-phase within a switched-gate bias scheme, a significant reduction of RTS noise is obtained.File in questo prodotto:
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