The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating under switched gate bias is investigated by accurate experiments. Our results show that by applying a forward substrate bias to a MOSFET periodically switched between thenominal bias point and the OFF-state, the flicker noise is significantly suppressed. In particular, forward back bias is effective if applied during the OFF-state. Additional analysis of the RTS noise due to individual traps in small-area devices, clarify that the application of forward substrate bias to switched MOSFETs causes a large reduction of the mean emission time and increases the mean capture time, leading to a suppression of the low-frequency noise associated to the trapping de-trapping processes.
The impact of substrate bias on RTS and flicker noise in MOSFETs operating under switched gate bias / N. Zanolla; D. Siprak; M. Tiebout; P. Baumgartner; E. Sangiorgi; C. Fiegna.. - STAMPA. - (2008), pp. 80-83. (Intervento presentato al convegno International Conference on Solid State and Integrated Circuits Technology tenutosi a Beijing, China nel 21-23 October 2008).
The impact of substrate bias on RTS and flicker noise in MOSFETs operating under switched gate bias
ZANOLLA, NICOLA;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2008
Abstract
The impact of substrate bias on random telegraph signal (RTS) and flicker noise in MOSFETs operating under switched gate bias is investigated by accurate experiments. Our results show that by applying a forward substrate bias to a MOSFET periodically switched between thenominal bias point and the OFF-state, the flicker noise is significantly suppressed. In particular, forward back bias is effective if applied during the OFF-state. Additional analysis of the RTS noise due to individual traps in small-area devices, clarify that the application of forward substrate bias to switched MOSFETs causes a large reduction of the mean emission time and increases the mean capture time, leading to a suppression of the low-frequency noise associated to the trapping de-trapping processes.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
