Random telegraph signal (RTS) affecting the drain current of small area n-type MOSFETs is extensively investigated. We report measurements and simulations of emission (τe) and capture (τc) time constants as a function of gate voltage for several individual traps. Different models proposed in the literature are applied and compared.
N. Zanolla, D. Siprak, P. Baumgartner, E. Sangiorgi, C. Fiegna (2008). Measurement and simulation of gate voltage dependence of RTS emission and capture time constants in MOSFETs. PISCATAWAY, NJ 08855-1331 : IEEE.
Measurement and simulation of gate voltage dependence of RTS emission and capture time constants in MOSFETs
ZANOLLA, NICOLA;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2008
Abstract
Random telegraph signal (RTS) affecting the drain current of small area n-type MOSFETs is extensively investigated. We report measurements and simulations of emission (τe) and capture (τc) time constants as a function of gate voltage for several individual traps. Different models proposed in the literature are applied and compared.File in questo prodotto:
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