Random telegraph signal (RTS) affecting the drain current of small area n-type MOSFETs is extensively investigated. We report measurements and simulations of emission (τe) and capture (τc) time constants as a function of gate voltage for several individual traps. Different models proposed in the literature are applied and compared.

Measurement and simulation of gate voltage dependence of RTS emission and capture time constants in MOSFETs

ZANOLLA, NICOLA;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2008

Abstract

Random telegraph signal (RTS) affecting the drain current of small area n-type MOSFETs is extensively investigated. We report measurements and simulations of emission (τe) and capture (τc) time constants as a function of gate voltage for several individual traps. Different models proposed in the literature are applied and compared.
Proceedings of the 9th International Conference on Ultimate integration on Silicon
137
140
N. Zanolla; D. Siprak; P. Baumgartner; E. Sangiorgi; C. Fiegna
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/61041
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