A 4-core cluster fabricated in low power 28nm UTBB FD-SOI conventional well technology is presented. The SoC architecture enables the processors to operate 'on-demand' on a 0.44V (1.8MHz) to 1.2V (475MHz) supply voltage wide range and -1.2V to 0.9V body bias wide range achieving the peak energy efficiency of 60 GOPS/W, (419μW, 6.4MHz) at 0.5V with 0.5V forward body bias. The proposed SoC energy efficiency is 1.4x to 3.7x greater than other low-power processors with comparable performance.

A -1.8V to 0.9V body bias, 60 GOPS/W 4-core cluster in low-power 28nm UTBB FD-SOI technology

ROSSI, DAVIDE;LOI, IGOR;BENINI, LUCA
2015

Abstract

A 4-core cluster fabricated in low power 28nm UTBB FD-SOI conventional well technology is presented. The SoC architecture enables the processors to operate 'on-demand' on a 0.44V (1.8MHz) to 1.2V (475MHz) supply voltage wide range and -1.2V to 0.9V body bias wide range achieving the peak energy efficiency of 60 GOPS/W, (419μW, 6.4MHz) at 0.5V with 0.5V forward body bias. The proposed SoC energy efficiency is 1.4x to 3.7x greater than other low-power processors with comparable performance.
Proceedings of the 2015 IEEE SOI-3D-Subthreshold Microelectronics Technology Unified Conference, S3S
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Rossi, Davide; Pullini, Antonio; Gautschi, Michael; Loi, Igor; Gurkaynak, Frank Kagan; Flatresse, Philippe; Benini, Luca
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/545766
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