Metal Wrap Through (MWT) solar cell represents a type of back-contact solution which allows to improve the efficiency of conventional silicon photovoltaic (PV) cells. In this work we use TCAD numerical simulations to investigate the performance of MWT cells. The impact of critical parameters, such as the resistance of VIA, the separation region and the busbar width is analyzed. The study of the main figures of merit under illumination and in dark condition allows to understand the physical mechanisms which limit the conversion efficiency.

TCAD numerical simulation of Metal Wrap Through solar cell2013 IEEE International Conference of Electron Devices and Solid-state Circuits / P. Magnone;C. Fiegna;E. Sangiorgi;D. Tonini;M. Frei. - ELETTRONICO. - (2013), pp. 1-2. (Intervento presentato al convegno 2013 IEEE International Conference of Electron Devices and Solid-state Circuits tenutosi a Hong Kong nel 3-5 June 2013) [10.1109/EDSSC.2013.6628112].

TCAD numerical simulation of Metal Wrap Through solar cell2013 IEEE International Conference of Electron Devices and Solid-state Circuits

MAGNONE, PAOLO;FIEGNA, CLAUDIO;SANGIORGI, ENRICO;
2013

Abstract

Metal Wrap Through (MWT) solar cell represents a type of back-contact solution which allows to improve the efficiency of conventional silicon photovoltaic (PV) cells. In this work we use TCAD numerical simulations to investigate the performance of MWT cells. The impact of critical parameters, such as the resistance of VIA, the separation region and the busbar width is analyzed. The study of the main figures of merit under illumination and in dark condition allows to understand the physical mechanisms which limit the conversion efficiency.
2013
2013 IEEE International Conference of Electron Devices and Solid-state Circuits
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TCAD numerical simulation of Metal Wrap Through solar cell2013 IEEE International Conference of Electron Devices and Solid-state Circuits / P. Magnone;C. Fiegna;E. Sangiorgi;D. Tonini;M. Frei. - ELETTRONICO. - (2013), pp. 1-2. (Intervento presentato al convegno 2013 IEEE International Conference of Electron Devices and Solid-state Circuits tenutosi a Hong Kong nel 3-5 June 2013) [10.1109/EDSSC.2013.6628112].
P. Magnone;C. Fiegna;E. Sangiorgi;D. Tonini;M. Frei
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/282117
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