In this work we propose a physics-based analytical model of nanowire tunnel FETs, which is meant to provide a fast tool for an optimized device design. The starting point of the model is the Landauer expression of the current for 1D physical systems, augmented with suitable expressions of the tunneling probability. The optimized device is numerically simulated using the k·p model, and its characteristics are in fair agreement with the analytical model.
Physics-Based Analytical Model of Nanowire Tunnel-FETs
GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2012
Abstract
In this work we propose a physics-based analytical model of nanowire tunnel FETs, which is meant to provide a fast tool for an optimized device design. The starting point of the model is the Landauer expression of the current for 1D physical systems, augmented with suitable expressions of the tunneling probability. The optimized device is numerically simulated using the k·p model, and its characteristics are in fair agreement with the analytical model.File in questo prodotto:
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