In this work, we model the electrical properties of a junctionless ultrathin-body silicon-on-insulator FET. The model is based on improved depletion approximation, which provides a very accurate solution of Poisson’s equation and allows for the computation of the substrate, as well as the Si-body lower- and upper-surface potentials by a procedure, which accounts for the backoxide (BOX) charge and thickness and the potential drop within the substrate. Analytical models of the threshold voltage and subthreshold slope are worked out against the substrate voltage, highlighting the effect of the substrate doping and BOX thickness on the aforementioned parameters.
Theory of the Junctionless UTB SOI-FET / Elena Gnani; Antonio Gnudi; Susanna Reggiani; Giorgio Baccarani. - ELETTRONICO. - (2012), pp. 1-1. (Intervento presentato al convegno MOS-AK 2012: Over Two Decades of Enabling Compact Modeling R&D Exchange tenutosi a Dresden nel 26-27 April).
Theory of the Junctionless UTB SOI-FET
GNANI, ELENA;GNUDI, ANTONIO;REGGIANI, SUSANNA;BACCARANI, GIORGIO
2012
Abstract
In this work, we model the electrical properties of a junctionless ultrathin-body silicon-on-insulator FET. The model is based on improved depletion approximation, which provides a very accurate solution of Poisson’s equation and allows for the computation of the substrate, as well as the Si-body lower- and upper-surface potentials by a procedure, which accounts for the backoxide (BOX) charge and thickness and the potential drop within the substrate. Analytical models of the threshold voltage and subthreshold slope are worked out against the substrate voltage, highlighting the effect of the substrate doping and BOX thickness on the aforementioned parameters.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
