The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical propagation of the heat. Electro-thermal numerical simulations are used to verify the accuracy of the proposed model.

Magnone P., Fiegna C., Greco G., Bazzano G., Rinaudo S., Sangiorgi E. (2012). Numerical simulation and modeling of thermal transient in silicon power devices. s.l : IEEE [10.1109/ULIS.2012.6193380].

Numerical simulation and modeling of thermal transient in silicon power devices

MAGNONE, PAOLO;FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2012

Abstract

The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical propagation of the heat. Electro-thermal numerical simulations are used to verify the accuracy of the proposed model.
2012
Ultimate Integration on Silicon (ULIS)
153
156
Magnone P., Fiegna C., Greco G., Bazzano G., Rinaudo S., Sangiorgi E. (2012). Numerical simulation and modeling of thermal transient in silicon power devices. s.l : IEEE [10.1109/ULIS.2012.6193380].
Magnone P.; Fiegna C.; Greco G.; Bazzano G.; Rinaudo S.; Sangiorgi E.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/123728
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