The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical propagation of the heat. Electro-thermal numerical simulations are used to verify the accuracy of the proposed model.
Numerical simulation and modeling of thermal transient in silicon power devices / Magnone P.; Fiegna C.; Greco G.; Bazzano G.; Rinaudo S.; Sangiorgi E.. - STAMPA. - (2012), pp. 6193380.153-6193380.156. (Intervento presentato al convegno Ultimate Integration on Silicon (ULIS) tenutosi a Grenoble (France) nel 6-7 March 2012) [10.1109/ULIS.2012.6193380].
Numerical simulation and modeling of thermal transient in silicon power devices
MAGNONE, PAOLO;FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2012
Abstract
The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical propagation of the heat. Electro-thermal numerical simulations are used to verify the accuracy of the proposed model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
