The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical propagation of the heat. Electro-thermal numerical simulations are used to verify the accuracy of the proposed model.
Magnone P., Fiegna C., Greco G., Bazzano G., Rinaudo S., Sangiorgi E. (2012). Numerical simulation and modeling of thermal transient in silicon power devices. s.l : IEEE [10.1109/ULIS.2012.6193380].
Numerical simulation and modeling of thermal transient in silicon power devices
MAGNONE, PAOLO;FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2012
Abstract
The description of thermal non-uniformity in large area power MOSFETs requires the modeling of a thermal network to account for the thermal interaction between adjacent devices. In this work we propose a methodology to derive a thermal network which is able to predict the thermal transient as a function of the longitudinal distance from the heat source. The network is calculated by assuming cylindrical propagation of the heat. Electro-thermal numerical simulations are used to verify the accuracy of the proposed model.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
