In this work we investigate the feasibility of a steep-slope nanowire FET based on the filtering of the high-energy electrons via a superlattice heterostructure in the source extension. Several material pairs are investigated for the superlattice, with the aim to identify the most promising ones with respect to the typical FET evaluation metrics. We found that the GaN-AlGaN pair provides excellent results, which led us to optimize its device structure. We obtain a peak SS ≈ 15 mV/dec and an ON-current approaching 1mA/μm.
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs / E. Gnani; P. Maiorano; S. Reggiani; A. Gnudi; G. Baccarani. - STAMPA. - (2011), pp. 201-202. (Intervento presentato al convegno Device Research Conference (DRC) tenutosi a Santa Barbara CA nel 20-22 June) [10.1109/DRC.2011.5994497].
Investigation on Superlattice Heterostructures for Steep-Slope Nanowire FETs
GNANI, ELENA;MAIORANO, PASQUALE;REGGIANI, SUSANNA;GNUDI, ANTONIO;BACCARANI, GIORGIO
2011
Abstract
In this work we investigate the feasibility of a steep-slope nanowire FET based on the filtering of the high-energy electrons via a superlattice heterostructure in the source extension. Several material pairs are investigated for the superlattice, with the aim to identify the most promising ones with respect to the typical FET evaluation metrics. We found that the GaN-AlGaN pair provides excellent results, which led us to optimize its device structure. We obtain a peak SS ≈ 15 mV/dec and an ON-current approaching 1mA/μm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
