statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	875
GB - Regno Unito	194
CN - Cina	182
VN - Vietnam	163
SG - Singapore	162
DE - Germania	68
IT - Italia	61
FR - Francia	51
HK - Hong Kong	31
RU - Federazione Russa	31
IN - India	30
BR - Brasile	21
IE - Irlanda	20
BE - Belgio	15
TG - Togo	15
SE - Svezia	14
JO - Giordania	13
ZA - Sudafrica	11
JP - Giappone	10
CA - Canada	9
KR - Corea	9
EE - Estonia	8
TW - Taiwan	8
UA - Ucraina	8
FI - Finlandia	7
SA - Arabia Saudita	7
CH - Svizzera	6
EC - Ecuador	5
NL - Olanda	5
PK - Pakistan	5
TH - Thailandia	5
AU - Australia	4
RO - Romania	4
TR - Turchia	4
AR - Argentina	3
ES - Italia	3
IQ - Iraq	3
MY - Malesia	3
PL - Polonia	3
TN - Tunisia	3
AT - Austria	2
CU - Cuba	2
CZ - Repubblica Ceca	2
ET - Etiopia	2
HU - Ungheria	2
LT - Lituania	2
MX - Messico	2
PH - Filippine	2
AE - Emirati Arabi Uniti	1
BD - Bangladesh	1
BF - Burkina Faso	1
BO - Bolivia	1
BS - Bahamas	1
CI - Costa d'Avorio	1
CL - Cile	1
CO - Colombia	1
ID - Indonesia	1
KG - Kirghizistan	1
KW - Kuwait	1
NO - Norvegia	1
NZ - Nuova Zelanda	1
PA - Panama	1
SI - Slovenia	1
SK - Slovacchia (Repubblica Slovacca)	1
TT - Trinidad e Tobago	1
UZ - Uzbekistan	1
Totale	2.113

Nome	#
Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy	236
Investigation of LaVO3based compounds as a photovoltaic absorber	232
Annealing effects on SiOxNy thin films: Optical and morphological properties	208
Multi-characterization study of interface passivation quality of amorphous sub-stoichiometric silicon oxide and silicon oxynitride layers for photovoltaic applications	191
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage	184
Transport properties of Si based nanocrystalline films investigated by c-AFM	181
Defective State Studies in III-Nitride Alloys by Surface Photovoltage Spectroscopy	176
Characterization of electrical nanoscale properties of Si-based thin films for photovoltaic applications	170
Electrical characterization at the nanoscale of Si-based thin films for photovoltaic applications	153
Annealing effects on silicon oxy-nitride thin films: optical, structural and morphological properties	152
Electrode distance induced changes in the growth of SiOxNy thin films for photovoltaic applications	150
Optical and electrical characterization of ternary and quaternary gallium nitride based alloys	127
Totale	2.160

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	56	0	0	0	0	0	0	0	0	0	0	3	53
2021/2022	256	17	10	43	3	26	15	6	14	20	12	24	66
2022/2023	328	47	41	19	49	23	17	17	17	57	6	26	9
2023/2024	69	3	16	2	6	18	13	2	0	0	4	0	5
2024/2025	282	6	50	39	15	67	7	9	2	9	15	17	46
2025/2026	646	54	41	63	41	83	30	81	27	151	59	16	0
Totale													2.160

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