statistiche ricercatore

Nazione	#
US - Stati Uniti d'America	883
GB - Regno Unito	194
CN - Cina	182
VN - Vietnam	167
SG - Singapore	162
DE - Germania	68
IT - Italia	64
FR - Francia	51
HK - Hong Kong	31
RU - Federazione Russa	31
IN - India	30
BR - Brasile	24
IE - Irlanda	20
BE - Belgio	15
TG - Togo	15
SE - Svezia	14
JO - Giordania	13
ZA - Sudafrica	11
JP - Giappone	10
CA - Canada	9
KR - Corea	9
EE - Estonia	8
TW - Taiwan	8
UA - Ucraina	8
FI - Finlandia	7
SA - Arabia Saudita	7
CH - Svizzera	6
EC - Ecuador	5
NL - Olanda	5
PK - Pakistan	5
TH - Thailandia	5
AU - Australia	4
RO - Romania	4
TR - Turchia	4
AR - Argentina	3
ES - Italia	3
HU - Ungheria	3
IQ - Iraq	3
MY - Malesia	3
PL - Polonia	3
TN - Tunisia	3
AT - Austria	2
BD - Bangladesh	2
CU - Cuba	2
CZ - Repubblica Ceca	2
ET - Etiopia	2
LT - Lituania	2
MX - Messico	2
PH - Filippine	2
AE - Emirati Arabi Uniti	1
BF - Burkina Faso	1
BO - Bolivia	1
BS - Bahamas	1
CI - Costa d'Avorio	1
CL - Cile	1
CO - Colombia	1
ID - Indonesia	1
KG - Kirghizistan	1
KW - Kuwait	1
NO - Norvegia	1
NZ - Nuova Zelanda	1
PA - Panama	1
SI - Slovenia	1
SK - Slovacchia (Repubblica Slovacca)	1
TT - Trinidad e Tobago	1
UZ - Uzbekistan	1
Totale	2.133

Nome	#
Electronic transitions in low dimensional semiconductor structures measured by surface photovoltage spectroscopy	238
Investigation of LaVO3based compounds as a photovoltaic absorber	235
Annealing effects on SiOxNy thin films: Optical and morphological properties	210
Multi-characterization study of interface passivation quality of amorphous sub-stoichiometric silicon oxide and silicon oxynitride layers for photovoltaic applications	192
Strain relaxation, extended defects and doping effects in InxGa1-xN/GaN heterostructures investigated by surface photovoltage	185
Transport properties of Si based nanocrystalline films investigated by c-AFM	182
Defective State Studies in III-Nitride Alloys by Surface Photovoltage Spectroscopy	179
Characterization of electrical nanoscale properties of Si-based thin films for photovoltaic applications	172
Annealing effects on silicon oxy-nitride thin films: optical, structural and morphological properties	154
Electrical characterization at the nanoscale of Si-based thin films for photovoltaic applications	154
Electrode distance induced changes in the growth of SiOxNy thin films for photovoltaic applications	151
Optical and electrical characterization of ternary and quaternary gallium nitride based alloys	128
Totale	2.180

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	256	17	10	43	3	26	15	6	14	20	12	24	66
2022/2023	328	47	41	19	49	23	17	17	17	57	6	26	9
2023/2024	69	3	16	2	6	18	13	2	0	0	4	0	5
2024/2025	282	6	50	39	15	67	7	9	2	9	15	17	46
2025/2026	665	54	41	63	41	83	30	81	27	151	59	19	16
2026/2027	1	1	0	0	0	0	0	0	0	0	0	0	0
Totale													2.180

CRIS Current Research Information System