BALESTRA, LUIGI
 Distribuzione geografica
Continente #
NA - Nord America 394
EU - Europa 344
AS - Asia 59
AF - Africa 17
Totale 814
Nazione #
US - Stati Uniti d'America 394
IT - Italia 198
DE - Germania 35
GB - Regno Unito 28
CN - Cina 20
FR - Francia 20
IN - India 19
AT - Austria 15
IE - Irlanda 15
SE - Svezia 12
TG - Togo 10
HK - Hong Kong 8
PL - Polonia 7
SG - Singapore 5
CI - Costa d'Avorio 4
HR - Croazia 4
RU - Federazione Russa 3
SA - Arabia Saudita 3
BE - Belgio 2
PK - Pakistan 2
ZA - Sudafrica 2
BD - Bangladesh 1
CH - Svizzera 1
EE - Estonia 1
FI - Finlandia 1
KZ - Kazakistan 1
MA - Marocco 1
NL - Olanda 1
PT - Portogallo 1
Totale 814
Città #
Ann Arbor 156
Chandler 32
Ashburn 30
Genova 24
Bologna 23
Fairfield 23
Southend 23
Dublin 15
Milan 15
Princeton 14
Vienna 13
Castanet-Tolosan 11
Wilmington 11
Houston 10
Lomé 10
Woodbridge 10
Corbetta 8
Warsaw 7
Munich 6
Padova 6
Ravenna 6
Seattle 6
Busalla 5
Frattamaggiore 5
Montegrotto Terme 5
Ozzano dell'Emilia 5
Redmond 5
Turin 5
Washington 5
Abidjan 4
Beijing 4
Cambridge 4
Milton Keynes 4
Olalla 4
Reggio Emilia 4
San Diego 4
San Giuliano Terme 4
Bagnacavallo 3
Berlin 3
Brescia 3
Castel Maggiore 3
Cesena 3
Des Moines 3
Jinan 3
Kista 3
Kolkata 3
Kowloon Bay 3
Medford 3
New York 3
Porto Tolle 3
Sant'Ambrogio di Valpolicella 3
Argelato 2
Brussels 2
Carpi 2
Changsha 2
Chicago 2
Duncan 2
Florence 2
Frankfurt am Main 2
Fremont 2
Fuzhou 2
Gualtieri 2
Hyderabad 2
Jeddah 2
Kowloon 2
Lecce 2
Los Angeles 2
Medolla 2
Mesagne 2
Monfalcone 2
Perugia 2
Redwood City 2
Rome 2
Rubano 2
Shatin 2
Westminster 2
Amsterdam 1
Astana 1
Bagerhat 1
Boardman 1
Bracciano 1
Bühl 1
Carmignano di Brenta 1
Chennai 1
Chiavari 1
Cittadella 1
Forlì 1
Guangzhou 1
Guimarães 1
Kilburn 1
Lappeenranta 1
Levanto 1
L’Aquila 1
Mannheim 1
Marseille 1
Moscow 1
Nanchang 1
Nanjing 1
Nashua 1
Nuremberg 1
Totale 642
Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 180
TCAD study of DLC coatings for large-area high-power diodes 130
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 116
Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers 102
Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range 58
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 49
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach 47
On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon 46
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 37
Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure 27
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions 25
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon 21
TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection 1
Totale 839
Categoria #
all - tutte 2.656
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 2.656


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202049 10 2 0 3 4 4 5 9 5 4 3 0
2020/202162 4 4 5 1 1 5 0 8 8 2 4 20
2021/2022342 32 29 40 32 28 29 23 41 44 12 11 21
2022/2023196 15 12 5 23 16 12 10 20 40 7 19 17
2023/2024183 14 29 19 20 19 16 25 9 3 12 15 2
Totale 839