CRIS Current Research Information System

BALESTRA, LUIGI
 Distribuzione geografica
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Continente #
AS - Asia 2.146
NA - Nord America 1.069
EU - Europa 862
AF - Africa 95
Continente sconosciuto - Info sul continente non disponibili 88
SA - Sud America 64
Totale 4.324
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Nazione #
VN - Vietnam 1.081
US - Stati Uniti d'America 1.032
IT - Italia 522
CN - Cina 361
SG - Singapore 329
HK - Hong Kong 87
BD - Bangladesh 75
DE - Germania 74
KR - Corea 70
FR - Francia 47
CI - Costa d'Avorio 46
IN - India 44
BR - Brasile 43
GB - Regno Unito 36
SE - Svezia 32
SC - Seychelles 26
RU - Federazione Russa 25
JP - Giappone 23
NL - Olanda 22
AT - Austria 21
CA - Canada 19
IE - Irlanda 19
FI - Finlandia 17
PH - Filippine 16
PL - Polonia 11
TG - Togo 10
TW - Taiwan 10
BE - Belgio 9
ID - Indonesia 8
SA - Arabia Saudita 8
TH - Thailandia 8
AR - Argentina 7
MX - Messico 7
PK - Pakistan 5
CH - Svizzera 4
CO - Colombia 4
ES - Italia 4
HR - Croazia 4
IQ - Iraq 4
MY - Malesia 4
ZA - Sudafrica 4
EC - Ecuador 3
NP - Nepal 3
UZ - Uzbekistan 3
CR - Costa Rica 2
DZ - Algeria 2
GH - Ghana 2
GT - Guatemala 2
HN - Honduras 2
LT - Lituania 2
MA - Marocco 2
PE - Perù 2
RO - Romania 2
RS - Serbia 2
SM - San Marino 2
TR - Turchia 2
UA - Ucraina 2
VE - Venezuela 2
BO - Bolivia 1
EE - Estonia 1
EG - Egitto 1
ET - Etiopia 1
GR - Grecia 1
GY - Guiana 1
HU - Ungheria 1
IL - Israele 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KZ - Kazakistan 1
LB - Libano 1
LV - Lettonia 1
PA - Panama 1
PR - Porto Rico 1
PT - Portogallo 1
PY - Paraguay 1
SV - El Salvador 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
Totale 4.236
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Città #
Ho Chi Minh City 333
Hanoi 268
Singapore 244
Ann Arbor 157
Hefei 137
Bologna 133
Ashburn 121
San Jose 83
Hong Kong 76
Milan 69
Seoul 66
Santa Clara 51
Abidjan 46
Da Nang 42
Dallas 38
Chandler 32
Haiphong 32
Quận Bình Thạnh 31
Beijing 28
Genova 24
Los Angeles 24
New York 24
Council Bluffs 23
Fairfield 23
Southend 23
Frankfurt am Main 21
Munich 20
Rome 20
Vũng Tàu 20
Cesena 19
Ha Long 19
Hải Dương 19
Tokyo 19
Biên Hòa 18
Vienna 18
Houston 17
Princeton 17
Dublin 16
Boardman 15
Lauterbourg 15
Thái Nguyên 15
Chicago 14
Ninh Bình 13
Shanghai 13
Bengaluru 12
Bắc Giang 12
Can Tho 12
Turin 12
Castanet-Tolosan 11
Warsaw 11
Wilmington 11
Buffalo 10
Bắc Ninh 10
Lomé 10
Naples 10
Woodbridge 10
Helsinki 9
Quận Một 9
Redondo Beach 9
Rimini 9
Amsterdam 8
Corbetta 8
Hangzhou 8
Quận Phú Nhuận 8
Brussels 7
Charlotte 7
Phan Thiết 7
Phoenix 7
Phủ Lý 7
Seattle 7
Thành Phố Bà Rịa 7
Vinh 7
Washington 7
Điện Bàn 7
Chennai 6
Florence 6
Mobile 6
Montreal 6
Moscow 6
Padova 6
Quận Bảy 6
Quận Năm 6
Ravenna 6
São Paulo 6
Taipei 6
Tam Bình 6
Bangkok 5
Busalla 5
Bến Tre 5
Frattamaggiore 5
Miami 5
Montegrotto Terme 5
Orem 5
Ozzano dell'Emilia 5
Redmond 5
Reggio Emilia 5
San Diego 5
San Lazzaro di Savena 5
Tongling 5
Zhengzhou 5
Totale 2.867
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Nome #
TCAD Investigation of Differently-Doped DLC Passivation for Large-Area High-Power Diodes 1.108
Group velocity of electrons in 4H-SiC from Density Functional Theory simulations 246
TCAD Modeling of High-Field Electron Transport in Bulk Wurtzite GaN: The Full-Band SHE-BTE 242
TCAD Study of VLD Termination in Large-Area Power Devices Featuring a DLC Passivation 235
Anomalous increase of leakage current in epoxy moulding compounds under wet conditions 233
TCAD study of DLC coatings for large-area high-power diodes 201
Numerical investigation of the leakage current and blocking capabilities of high-power diodes with doped dlc passivation layers 192
Characterization and TCAD Modeling of the Lateral Space Charge Accumulation in Epoxy Molding Compound in Packaged HV-ICs 173
Electron effective masses of Scx Al1- x N and Alx Ga1- x N from first-principles calculations of unfolded band structure 165
On the breakdown voltage temperature dependence of high-voltage power diodes passivated with diamond-like carbon 162
TCAD analysis of the high-temperature reverse-bias stress on AlGaN/GaN HEMTs 155
Influence of the DLC Passivation Conductivity on the Performance of Silicon High-Power Diodes over an Extended Temperature Range 145
Current Instabilities in Large-Area Silicon Diodes: An Accurate TCAD Approach 137
Dielectric Breakdown of in-Package Epoxy Mold Compound under Wet and Dry Conditions: Frequency and Temperature dependence 125
Role of trapping/detrapping in HTRB Stress and pulsed DC conditions in AlGaN/GaN HEMTs analyzed via TCAD simulations 120
On the Breakdown Voltage Temperature Dependence of High-Voltage Power Diode Passivated with Diamond-Like Carbon 118
Impact of water absorption on electrical properties of epoxy composite polymers: Suppressed charge trapping and enhanced ion transport 111
Characterization and TCAD Simulation of the Electrostatic Potential Distortion in HV-ICs due to Losses in the Epoxy Mold Compound 100
Reliability of AlScN/GaN HEMTs Under Pulsed Measurements and HTRB Step-Stress Tests: Experimental and TCAD Insights 98
TCAD study of the Holding-Voltage Modulation in Irradiated SCR-LDMOS for HV ESD Protection 94
Impact of interface traps on the subthreshold performance of InGaAs nanosheet transistors 85
In-Package Measurements of Space-Charge Accumulation in Epoxy Mold Compound Through Silicon Integrated Charge Sensors 79
Totale 4.324
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Categoria #
all - tutte 10.092
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.092
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022281 0 0 40 32 28 29 23 41 44 12 11 21
2022/2023196 15 12 5 23 16 12 10 20 40 7 19 17
2023/2024190 14 29 19 20 19 16 25 9 3 12 15 9
2024/2025641 46 29 25 79 99 22 51 32 14 36 67 141
2025/20262.665 946 202 147 169 123 60 144 45 338 134 135 222
2026/2027172 74 46 52 0 0 0 0 0 0 0 0 0
Totale 4.324