RIGUTTI, LORENZO
 Distribuzione geografica
Continente #
NA - Nord America 877
EU - Europa 559
AS - Asia 249
AF - Africa 32
OC - Oceania 3
SA - Sud America 3
Totale 1.723
Nazione #
US - Stati Uniti d'America 876
GB - Regno Unito 167
CN - Cina 83
DE - Germania 80
SG - Singapore 80
UA - Ucraina 79
IT - Italia 61
SE - Svezia 60
VN - Vietnam 53
IN - India 27
IE - Irlanda 26
FR - Francia 24
RU - Federazione Russa 24
BG - Bulgaria 15
TG - Togo 13
EE - Estonia 11
ZA - Sudafrica 11
SC - Seychelles 8
JP - Giappone 4
AU - Australia 3
BE - Belgio 3
FI - Finlandia 3
NL - Olanda 3
AM - Armenia 2
CH - Svizzera 2
BR - Brasile 1
CA - Canada 1
CL - Cile 1
GR - Grecia 1
PE - Perù 1
Totale 1.723
Città #
Southend 147
Fairfield 124
Houston 85
Santa Clara 82
Singapore 74
Chandler 62
Jacksonville 60
Ashburn 53
Woodbridge 48
Wilmington 45
Seattle 44
Dong Ket 40
Ann Arbor 39
Cambridge 36
Princeton 30
Dublin 26
Boardman 16
Turin 16
Padova 15
Sofia 15
Westminster 15
Berlin 14
Lomé 13
Mülheim 10
Nanjing 9
San Diego 9
Mahé 8
Milan 8
Hebei 7
Saint Petersburg 7
Nanchang 6
Shenyang 5
Medford 4
Mountain View 4
Shanghai 4
Verona 4
Brussels 3
Frankfurt Am Main 3
Helsinki 3
Jinan 3
Melbourne 3
Tokyo 3
Angri 2
Chicago 2
Dearborn 2
Fuzhou 2
Groningen 2
Guangzhou 2
Haikou 2
Kunming 2
Lanzhou 2
Olalla 2
Shenzhen 2
Taizhou 2
Tianjin 2
Yerevan 2
Zhengzhou 2
Beijing 1
Bologna 1
Bühl 1
Changchun 1
Changsha 1
Clearwater 1
Des Moines 1
Dezhou 1
Falls Church 1
Foshan 1
Genzano Di Roma 1
Hangzhou 1
Huaibei 1
Islington 1
Jiaxing 1
Kilburn 1
Lima 1
London 1
Los Angeles 1
Norwalk 1
Providence 1
Pune 1
Qingdao 1
Redwood City 1
San Jose 1
Suzhou 1
São Paulo 1
Toronto 1
Wenzhou 1
Wuhan 1
Zurich 1
Totale 1.263
Nome #
Short term instabilities of InGaN/GaN light-emitting diodes by capacitance-voltage characteristics and junction spectroscopy 172
Deep Levels by proton- and electron-irradiation in 4H-SiC 135
A model for the thermal degradation of metal/(p-GaN) interface in GaN-based LEDs 131
Low temperature annealing of electron irradiation induced defects in 4H-SiC 127
Redistribution of multi-quantum well states induced by current stress in InxGa1−xN/GaN light-emitting diodes 124
Assessment of the intrinsic nature of defect Z1/Z2 by compensation effects in proton-irradiated 4H-SIC 123
Role of deep levels in DC current aging of GaN/InGaN Light-Emitting Diodes studied by Capacitance and Photocurrent Spectroscopy 116
Electronic levels introduced by irradiation in silicon carbide. 114
Photocurrent spectroscopy evidence for stress-induced recombination centres in quantum wells of InGaN/GaN-based light-emitting diodes 113
Anomalous deep level transient related to piezoelectric fields in QW-based InGaN/GaN light-emitting diodes 108
Diffusion length and junction spectroscopy analysis of low-temperature annealing of electron irradiation-induced deep levels in 4H-SiC 100
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes 99
Recovery effect of electron irradiated 4H-SiC Schottky diodes 96
Preface of the Special Issue: Special Issue: III-Nitride Nanostructures Preface 89
Silicon Carbide for alpha, beta, ion and soft X-ray high performance detectors 87
Totale 1.734
Categoria #
all - tutte 4.312
article - articoli 0
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 4.312


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020329 0 0 0 0 0 51 86 71 51 32 18 20
2020/2021245 52 22 9 22 0 15 1 24 11 15 13 61
2021/2022231 29 5 20 17 19 19 6 18 7 5 34 52
2022/2023314 42 47 21 30 15 25 3 19 45 3 40 24
2023/202466 5 10 7 10 7 20 2 2 1 1 0 1
2024/2025228 15 76 12 26 90 9 0 0 0 0 0 0
Totale 1.734