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EnglishIn this work, we study the impact of device self heating on Bulk and doublegate silicon on insulator (DGSOI) technologies using self consistent electro-thermal (ET) simulations. Device characteristics of Bulk and DGSOI MOSFETs have been studied to estimate device performance and the impact of selfheating on the same. Self-heating effect (SHE) on the AC performance has also been studied for these two technologies.
| Titolo: | Self-Heating Effects in Analog Bulk and SOI CMOS Circuits | |
| Autore/i: | U. Roy; SANGIORGI, ENRICO; FIEGNA, CLAUDIO | |
| Autore/i Unibo: | ||
| Anno: | 2010 | |
| Titolo del libro: | 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology Proceedings | |
| Pagina iniziale: | 1782 | |
| Pagina finale: | 1785 | |
| Abstract: | In this work, we study the impact of device self heating on Bulk and doublegate silicon on insulator (DGSOI) technologies using self consistent electro-thermal (ET) simulations. Device characteristics of Bulk and DGSOI MOSFETs have been studied to estimate device performance and the impact of selfheating on the same. Self-heating effect (SHE) on the AC performance has also been studied for these two technologies. | |
| Data prodotto definitivo in UGOV: | 20-nov-2010 | |
| Appare nelle tipologie: | 4.01 Contributo in Atti di convegno |
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