The spherical-harmonics expansion (SHE) method is employed to solve the Boltzmann transport equation (BTE) in SiO2. Both the polar and nonpolar electron-phonon scattering mechanisms are considered. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The analysis shows a good agreement in comparison with experiments in the low-field regime.

Scozzoli L., Reggiani S., Rudan M. (1999). Homogeneous transport in silicon dioxide using the spherical-harmonics expansion of the BTE. Piscataway, NJ, United States : IEEE.

Homogeneous transport in silicon dioxide using the spherical-harmonics expansion of the BTE

Reggiani S.;Rudan M.
1999

Abstract

The spherical-harmonics expansion (SHE) method is employed to solve the Boltzmann transport equation (BTE) in SiO2. Both the polar and nonpolar electron-phonon scattering mechanisms are considered. A number of macroscopic transport properties of electrons in SiO2 are worked out in the steady-state regime for a homogeneous bulk structure. The analysis shows a good agreement in comparison with experiments in the low-field regime.
1999
International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
251
254
Scozzoli L., Reggiani S., Rudan M. (1999). Homogeneous transport in silicon dioxide using the spherical-harmonics expansion of the BTE. Piscataway, NJ, United States : IEEE.
Scozzoli L.; Reggiani S.; Rudan M.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/895741
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