Comprehensive system for submicron-device simulation

We present here a comprehensive system for submicron-device simulation based on the hydrodynamic (HD) model and the expansion of the Boltzmann equation (BTE) in spherical harmonics (SHE). In the typical operating regime of semiconductor devices, the accurate calculation of the carrier concentration and velocity, along with the information about the carrier temperature, provided by the HD model, is important for describing a number of phenomena indicated by the general term hot-carrier effects, which play a relevant role in modern devices. The coefficients of the model are computed by adopting the solution method for the BTE based on the SHE, and using the full-band structure for both the electron and valence band of silicon. The dependence of the coefficients on lattice temperature has been investigated and compared with available experimental data.