A compact model for the Double-Gate MOSFET (DG-MOSFET) which fully accounts for quantum mechanical effects, including motion quantization normal to the Si-SiO2 interface, band splitting into subbands and non-static effects in the transport model is worked out. The model holds both in subthreshold and strong inversion, and ensures a smooth transition between the two regions. A simplified energy-balance transport model is worked out which allows us to compare the drain-current calculations with Monte Carlo data.
Compact double-gate MOSFET model comprising quantum-mechanical and non-static effects
Baccarani G.;Reggiani S.
1999
Abstract
A compact model for the Double-Gate MOSFET (DG-MOSFET) which fully accounts for quantum mechanical effects, including motion quantization normal to the Si-SiO2 interface, band splitting into subbands and non-static effects in the transport model is worked out. The model holds both in subthreshold and strong inversion, and ensures a smooth transition between the two regions. A simplified energy-balance transport model is worked out which allows us to compare the drain-current calculations with Monte Carlo data.File in questo prodotto:
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