In this work we investigate and compare the electrostatics of carbon-nanotuhc field-effect transistor (CNT-FET) arrays. To this purpose, we have developed a self-consistent Schrodinger-Poisson solver which fully takes into account quantum effects and the CNTs physical properties. We show that quantum effects have to he carefully taken into account in order to properly catch the electrostatic behavior of these devices. A further analysis is carried out in order to quantify the screening effects that arise when an array of nanotubes in parallel is used, showing that such effects play a fundamental role in the electrostatic performance of CNT-FET arrays.
A schrödinger-poisson solution of CNT-FET arrays
Marchi A.;Reggiani S.;Rudan M.
2005
Abstract
In this work we investigate and compare the electrostatics of carbon-nanotuhc field-effect transistor (CNT-FET) arrays. To this purpose, we have developed a self-consistent Schrodinger-Poisson solver which fully takes into account quantum effects and the CNTs physical properties. We show that quantum effects have to he carefully taken into account in order to properly catch the electrostatic behavior of these devices. A further analysis is carried out in order to quantify the screening effects that arise when an array of nanotubes in parallel is used, showing that such effects play a fundamental role in the electrostatic performance of CNT-FET arrays.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
