In this work we examine the performance limits of CMOS technology in the nanometer regime. The starting point of our discussion is the 1999 International Technology Roadmap for Semiconductors, which represents the current view of Industry on the future evolution and prospects of microelectronics. Next, we shortly address the physical principles of single-electron devices, and speculate on the opportunities offered by them for the implementation of single-electron circuits for logic and memory applications. © 2000 Académie des sciences/Éditions scientifiques et médicales Elsevier SAS.
Baccarani G., Reggiani S. (2000). Performance limits of CMOS technology and perspectives of quantum devices. COMPTES RENDUS DE L'ACADÉMIE DES SCIENCES. SÉRIE IV, PHYSIQUE, ASTROPHYSIQUE, 1(7), 843-873 [10.1016/S1296-2147(00)01100-8].
Performance limits of CMOS technology and perspectives of quantum devices
Baccarani G.;Reggiani S.
2000
Abstract
In this work we examine the performance limits of CMOS technology in the nanometer regime. The starting point of our discussion is the 1999 International Technology Roadmap for Semiconductors, which represents the current view of Industry on the future evolution and prospects of microelectronics. Next, we shortly address the physical principles of single-electron devices, and speculate on the opportunities offered by them for the implementation of single-electron circuits for logic and memory applications. © 2000 Académie des sciences/Éditions scientifiques et médicales Elsevier SAS.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
