TCAD simulations of SiC power MOSFETs have been performed to study the dependence of positive-bias temperature instability (PBTI) on temperature and electric field. The model used to describe the kinetics of the transition rates between neutral and charged traps is the extended Non-Radiative Multi Phonon (eNMP). Connections between oxide defect configurations at the interface with SiC substrate have been made. Validation against experiments is shown.
Carangelo G., Reggiani S., Consentino G., Crupi F., Meneghesso G. (2021). TCAD modeling of bias temperature instabilities in SiC MOSFETs. SOLID-STATE ELECTRONICS, 185, 1-5 [10.1016/j.sse.2021.108067].
TCAD modeling of bias temperature instabilities in SiC MOSFETs
Carangelo G.
;Reggiani S.;
2021
Abstract
TCAD simulations of SiC power MOSFETs have been performed to study the dependence of positive-bias temperature instability (PBTI) on temperature and electric field. The model used to describe the kinetics of the transition rates between neutral and charged traps is the extended Non-Radiative Multi Phonon (eNMP). Connections between oxide defect configurations at the interface with SiC substrate have been made. Validation against experiments is shown.| File | Dimensione | Formato | |
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