Three-dimensional die stacking integration provides the ability to stack multiple layers of processed silicon with a large number of vertical interconnects. Through Silicon Vias (TSVs) provide a promising area- and power-efficient way to support communication between different stack layers. Unfortunately, low TSV yield significantly impacts design of three-dimensional die stacks with a large number of TSVs. This paper presents a defect-tolerance technique for TSVs-based multi-bit links through an efficient and effective use of redundancy. This technique is ideally suited for three-dimensional network-on-chip (NoC) links. Simulation results demonstrate significant yield improvement, from 66% to 98%, with a low area cost (17% on a vertical link in a NoC switch, which leads a modest 2.1% increase the total switch area) in 130nm technology, with minimal impact of VLSI design and test flows.
A low-overhead fault tolerance scheme for TSV-based 3D network on chip links.
LOI, IGOR;BENINI, LUCA
2008
Abstract
Three-dimensional die stacking integration provides the ability to stack multiple layers of processed silicon with a large number of vertical interconnects. Through Silicon Vias (TSVs) provide a promising area- and power-efficient way to support communication between different stack layers. Unfortunately, low TSV yield significantly impacts design of three-dimensional die stacks with a large number of TSVs. This paper presents a defect-tolerance technique for TSVs-based multi-bit links through an efficient and effective use of redundancy. This technique is ideally suited for three-dimensional network-on-chip (NoC) links. Simulation results demonstrate significant yield improvement, from 66% to 98%, with a low area cost (17% on a vertical link in a NoC switch, which leads a modest 2.1% increase the total switch area) in 130nm technology, with minimal impact of VLSI design and test flows.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
