A technology-independent set-up for the full and direct characterization of short-circuit lowfrequency noise currents in two-port electron devices is presented. It is based on the use of low-noise transimpedance amplifiers and a specially-designed active bias network, adopted at the collector/drain port of the device. The features of the set-up proposed allow for a fast and accurate estimation of LF noise current power spectra, within a wide range of DC current bias levels, without the need for any reconfigurations and by carrying out a single-step procedure to achieve each bias point of interest.
C. Florian, P. A. Traverso (2008). Active bias network-based measurement set-up for the direct characterization of low-frequency noise currents in electron devices. FLORENCE : s.n.
Active bias network-based measurement set-up for the direct characterization of low-frequency noise currents in electron devices
FLORIAN, CORRADO;TRAVERSO, PIER ANDREA
2008
Abstract
A technology-independent set-up for the full and direct characterization of short-circuit lowfrequency noise currents in two-port electron devices is presented. It is based on the use of low-noise transimpedance amplifiers and a specially-designed active bias network, adopted at the collector/drain port of the device. The features of the set-up proposed allow for a fast and accurate estimation of LF noise current power spectra, within a wide range of DC current bias levels, without the need for any reconfigurations and by carrying out a single-step procedure to achieve each bias point of interest.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.