The impact of gradual transistion of band-gap and permittivity at the interfaces between silicon and gate dielectric and between different dielectrics within a stacked high-K dielectric is analyzed by the numerical solution of the Schroedinger equation with open boundary conditions, coupled to the Poisson equation.
S. Markov, S. Roy, C. Fiegna, E. Sangiorgi, A. Asenov (2008). On the sub-nm EOT scaling of high-K gate stacks. PISKATAWAY, NJ 08855-1331 : IEEE.
On the sub-nm EOT scaling of high-K gate stacks
FIEGNA, CLAUDIO;SANGIORGI, ENRICO;
2008
Abstract
The impact of gradual transistion of band-gap and permittivity at the interfaces between silicon and gate dielectric and between different dielectrics within a stacked high-K dielectric is analyzed by the numerical solution of the Schroedinger equation with open boundary conditions, coupled to the Poisson equation.File in questo prodotto:
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