In this work we present an Emitter Wrap Through cell with Deep Grooved Base contact (EWT-DGB), designed for both 1-sun and concentrating applications. The proposed approach, which consists in a deep grooved hole array composed by holes of two alternating doping type, allows both a reduction of the cell series resistance and an increase in collection efficiency also by using relatively thick substrates with low lifetime. The measured experimental data including dark J-V characteristics, figures of merit (FOMs) under illumination and external quantum efficiency (EQE) are compared to the results of 3-D drift-diffusion TCAD numerical simulations. Moreover, the impact of the hole spacing and of process-dependent physical parameters (interface defects) on FOMs is investigated by means of simulations.
Massimo, N., Mauro, Z., Giovanni, P., Giuseppe de, C., Lorenza, F., Pierluigi, B., et al. (2016). Numerical Simulation and Experimental Characterization of Emitter Wrap through Solar Cells with Deep Grooved Base Contact (EWT-DGB). ENERGY PROCEDIA, 92, 160-169 [10.1016/j.egypro.2016.07.015].
Numerical Simulation and Experimental Characterization of Emitter Wrap through Solar Cells with Deep Grooved Base Contact (EWT-DGB)
NICOLAI, MASSIMO;ZANUCCOLI, MAURO;PATERNOSTER, GIOVANNI;SANGIORGI, ENRICO;FIEGNA, CLAUDIO
2016
Abstract
In this work we present an Emitter Wrap Through cell with Deep Grooved Base contact (EWT-DGB), designed for both 1-sun and concentrating applications. The proposed approach, which consists in a deep grooved hole array composed by holes of two alternating doping type, allows both a reduction of the cell series resistance and an increase in collection efficiency also by using relatively thick substrates with low lifetime. The measured experimental data including dark J-V characteristics, figures of merit (FOMs) under illumination and external quantum efficiency (EQE) are compared to the results of 3-D drift-diffusion TCAD numerical simulations. Moreover, the impact of the hole spacing and of process-dependent physical parameters (interface defects) on FOMs is investigated by means of simulations.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
