Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
E. Sangiorgi, P. Palestri, D. Esseni, C. Fiegna, L. Selmi (2007). Monte Carlo modeling of nanometer scale MOSFETs. MUMBAI : Sine nomine.
Monte Carlo modeling of nanometer scale MOSFETs
SANGIORGI, ENRICO;FIEGNA, CLAUDIO;
2007
Abstract
Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
