Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.

Monte Carlo modeling of nanometer scale MOSFETs

SANGIORGI, ENRICO;FIEGNA, CLAUDIO;
2007

Abstract

Recent developments in the Monte Carlo method for the simulation of semi-classical carrier transport in nano-MOSFETs include the treatment of quantum-mechanical effects in the simulation (using either the Multi-Subband approach or quantum corrections to the electrostatic potential). In this paper, after reviewing recent progress in this field, selected applications are presented, including the analysis of quasi-ballistic transport, the determination of the RF characteristics of deca-nanometric MOSFETs, and the study of non-conventional device structures and channel materials.
2007
Proceedings of the XIV International Workshop on the Physics of Semiconductor Devices: IWPSD 2007
68
73
E. Sangiorgi; P. Palestri; D. Esseni; C. Fiegna; L. Selmi
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/56256
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