In the present paper, the experimental identification of a compact low frequency noise model of GaInP/GaAs Heterojunction Bipolar Transistors and its implementation in a widely employed RF CAD software is described. The model is analytical so that its CAD implementation does not require look-up tables. The model allows the control of the noise sources inside the devices through the instantaneous value of the base current.
M. Borgarino, N. Corciulo, C. Florian, P. A. Traverso, F. Fantini, F. Filicori (2006). Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation. KARLSRUHE : IEEE.
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation
FLORIAN, CORRADO;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2006
Abstract
In the present paper, the experimental identification of a compact low frequency noise model of GaInP/GaAs Heterojunction Bipolar Transistors and its implementation in a widely employed RF CAD software is described. The model is analytical so that its CAD implementation does not require look-up tables. The model allows the control of the noise sources inside the devices through the instantaneous value of the base current.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
