In the present paper, the experimental identification of a compact low frequency noise model of GaInP/GaAs Heterojunction Bipolar Transistors and its implementation in a widely employed RF CAD software is described. The model is analytical so that its CAD implementation does not require look-up tables. The model allows the control of the noise sources inside the devices through the instantaneous value of the base current.
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation / M. Borgarino; N. Corciulo; C. Florian; P. A. Traverso; F. Fantini; F. Filicori. - ELETTRONICO. - (2006). (Intervento presentato al convegno IEEE German Microwave Conference - GeMiC 2006 tenutosi a KARLSRUHE, Germany nel Mar. 2006).
Bias Dependent, Compact Low-Frequency Noise Model of GaInP/GaAs HBT: Experimental Identification and CAD Implementation
FLORIAN, CORRADO;TRAVERSO, PIER ANDREA;FILICORI, FABIO
2006
Abstract
In the present paper, the experimental identification of a compact low frequency noise model of GaInP/GaAs Heterojunction Bipolar Transistors and its implementation in a widely employed RF CAD software is described. The model is analytical so that its CAD implementation does not require look-up tables. The model allows the control of the noise sources inside the devices through the instantaneous value of the base current.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
