In this paper we propose two synthesizable 3D network architectures: C-LIN and D-LIN, which allow modular stacking of multiple L1 memory dies over a multi-core cluster with a limited number of processing elements (PEs). Two Through Silicon Via (TSV) technologies are used: the state of the art Micro-bumps and the promising and dense Cu-Cu Direct Bonding, with consideration of the ESD protection circuits. Our results demonstrate that, in processor-to-L1-memory context, CLIN and D-LIN perform significantly better than traditional network on chips and simple time-division multiplexing buses, and they achieve comparable speed vs. their 2D counterparts, while enabling modularity: from 256KB to 2MB L1 memory configurations with a single mask set.

3D logarithmic interconnect: Stacking multiple L1 memory dies over multi-core clusters2013 Seventh IEEE/ACM International Symposium on Networks-on-Chip (NoCS)

AZARKHISH, ERFAN;LOI, IGOR;BENINI, LUCA
2013

Abstract

In this paper we propose two synthesizable 3D network architectures: C-LIN and D-LIN, which allow modular stacking of multiple L1 memory dies over a multi-core cluster with a limited number of processing elements (PEs). Two Through Silicon Via (TSV) technologies are used: the state of the art Micro-bumps and the promising and dense Cu-Cu Direct Bonding, with consideration of the ESD protection circuits. Our results demonstrate that, in processor-to-L1-memory context, CLIN and D-LIN perform significantly better than traditional network on chips and simple time-division multiplexing buses, and they achieve comparable speed vs. their 2D counterparts, while enabling modularity: from 256KB to 2MB L1 memory configurations with a single mask set.
2013 Seventh IEEE/ACM International Symposium on Networks-on-Chip (NoCS)
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Erfan Azarkhish;Igor Loi;Luca Benini
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11585/306750
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