Self-heating in Silicon-Germanium field effect transistors have been analyzed by both experiments and numerical simulation. Techniques based on strain engineering are proposed in order to minimize heating effects.
Reduced self-heating by strained silicon substrate engineering / O'Neill A.; Agaiby R.; Olsen S.; Yang Y.; Hellstrom; P. -E.; Ostling M.; Oehme M.; Lyutovich K.; Kasper E.; Eneman G.; Verheyen P.; Loo R.; Claeys C.; Fiegna C.; Sangiorgi E.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 254:(2008), pp. 6182-6185. [10.1016/j.apsusc.2008.02.172]
Reduced self-heating by strained silicon substrate engineering
FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2008
Abstract
Self-heating in Silicon-Germanium field effect transistors have been analyzed by both experiments and numerical simulation. Techniques based on strain engineering are proposed in order to minimize heating effects.File in questo prodotto:
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