Self-heating in Silicon-Germanium field effect transistors have been analyzed by both experiments and numerical simulation. Techniques based on strain engineering are proposed in order to minimize heating effects.

Reduced self-heating by strained silicon substrate engineering / O'Neill A.; Agaiby R.; Olsen S.; Yang Y.; Hellstrom; P. -E.; Ostling M.; Oehme M.; Lyutovich K.; Kasper E.; Eneman G.; Verheyen P.; Loo R.; Claeys C.; Fiegna C.; Sangiorgi E.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 254:(2008), pp. 6182-6185. [10.1016/j.apsusc.2008.02.172]

Reduced self-heating by strained silicon substrate engineering

FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2008

Abstract

Self-heating in Silicon-Germanium field effect transistors have been analyzed by both experiments and numerical simulation. Techniques based on strain engineering are proposed in order to minimize heating effects.
2008
Reduced self-heating by strained silicon substrate engineering / O'Neill A.; Agaiby R.; Olsen S.; Yang Y.; Hellstrom; P. -E.; Ostling M.; Oehme M.; Lyutovich K.; Kasper E.; Eneman G.; Verheyen P.; Loo R.; Claeys C.; Fiegna C.; Sangiorgi E.. - In: APPLIED SURFACE SCIENCE. - ISSN 0169-4332. - STAMPA. - 254:(2008), pp. 6182-6185. [10.1016/j.apsusc.2008.02.172]
O'Neill A.; Agaiby R.; Olsen S.; Yang Y.; Hellstrom; P. -E.; Ostling M.; Oehme M.; Lyutovich K.; Kasper E.; Eneman G.; Verheyen P.; Loo R.; Claeys C.; Fiegna C.; Sangiorgi E.
File in questo prodotto:
Eventuali allegati, non sono esposti

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11585/108634
 Attenzione

Attenzione! I dati visualizzati non sono stati sottoposti a validazione da parte dell'ateneo

Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 30
  • ???jsp.display-item.citation.isi??? 25
social impact