Self-heating in Silicon-Germanium field effect transistors have been analyzed by both experiments and numerical simulation. Techniques based on strain engineering are proposed in order to minimize heating effects.
O'Neill A., Agaiby R., Olsen S., Yang Y., Hellstrom, P. -E., et al. (2008). Reduced self-heating by strained silicon substrate engineering. APPLIED SURFACE SCIENCE, 254, 6182-6185 [10.1016/j.apsusc.2008.02.172].
Reduced self-heating by strained silicon substrate engineering
FIEGNA, CLAUDIO;SANGIORGI, ENRICO
2008
Abstract
Self-heating in Silicon-Germanium field effect transistors have been analyzed by both experiments and numerical simulation. Techniques based on strain engineering are proposed in order to minimize heating effects.File in questo prodotto:
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