Aim of this present work was to investigate the electrical and the optical properties of erbium centers in silicon epilayers grown by Liquid Phase Epitaxy (LPE) at 975 °C from In:Si liquid solutions. The characterization was performed using Light Beam Induced Current (LBIC), Photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS). Samples obtained from Er-rich solutions show optical activity only after thermal treatment at 1100 °C. Their optical activity is associated with the formation of Er-O bonds. On the contrary, as-grown samples obtained from Er-diluted solutions exhibit a relevant optical activity also a 200 K, which is related to the presence of dislocations. A comparison between the optical properties of Er and O co-implanted samples and LPE samples supports the view that dislocations play a role in the optical activity of Er:Si samples.
Binetti, S., Donghi, M., Pizzini, S., Castaldini, A., Cavallini, A., Fraboni, B., et al. (1997). Erbium in silicon: Problems and challenges. DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA, 57-58, 197-206 [10.4028/www.scientific.net/ssp.57-58.197].
Erbium in silicon: Problems and challenges
Castaldini A.;Cavallini A.;Fraboni B.;
1997
Abstract
Aim of this present work was to investigate the electrical and the optical properties of erbium centers in silicon epilayers grown by Liquid Phase Epitaxy (LPE) at 975 °C from In:Si liquid solutions. The characterization was performed using Light Beam Induced Current (LBIC), Photoluminescence (PL) and Deep Level Transient Spectroscopy (DLTS). Samples obtained from Er-rich solutions show optical activity only after thermal treatment at 1100 °C. Their optical activity is associated with the formation of Er-O bonds. On the contrary, as-grown samples obtained from Er-diluted solutions exhibit a relevant optical activity also a 200 K, which is related to the presence of dislocations. A comparison between the optical properties of Er and O co-implanted samples and LPE samples supports the view that dislocations play a role in the optical activity of Er:Si samples.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
